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Author Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E.
Title The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts Type Conference Article
Year 2018 Publication Materials Today: Proc. Abbreviated Journal Materials Today: Proc.
Volume 5 Issue 13 Pages 27301-27306
Keywords graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor
Abstract We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
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ISSN 2214-7853 ISBN Medium
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Notes Approved no
Call Number Serial 1316
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Author Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E.
Title Electron heating in metallic resistors at sub-Kelvin temperature Type Journal Article
Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 76 Issue Pages 165426(1-9)
Keywords electron heating in resistor, HEB distributed model, HEB model, hot electrons
Abstract In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.
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Notes Recommended by Klapwijk as example for writing the article on the HEB model. Approved no
Call Number Serial 936
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Author Jackson, B. D.; Hesper, R.; Adema, J.; Barkhof, J.; Baryshev, A. M.; Zijlstra, T.; Zhu, S.; Klapwijk, T. M.
Title Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA Type Conference Article
Year 2009 Publication Proc. 20th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 7-11
Keywords SIS mixer, noise temperature, ALMA, band 9
Abstract The Atacama Large Millimeter/Sub-millimeter Array (ALMA) requires the development and production of 73 state-of-the-art receivers for the 602-720 GHz range – the ALMA Band 9 cartridges. Development and pre-production of the first 8 cartridges was completed between 2003 and 2008, resulting in a cartridge design that meets the project's challenging requirements. The cartridge design remains essentially unchanged for production, while the production and test processes developed during pre-production have been fine-tuned to address the biggest new challenge for this phase – ramping up production to a rate of 2 cartridges per month over 2009-2012.
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Notes Approved no
Call Number Serial 618
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
Title Relaxation of the resistive superconducting state in boron-doped diamond films Type Journal Article
Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 93 Issue 6 Pages 064506
Keywords boron-doped diamond films, resistive superconducting state, relaxation time
Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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ISSN 2469-9950 ISBN Medium
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Notes Approved no
Call Number Serial 1167
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Author Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J.
Title Broadband SIS mixer for 1 THz Band Type Conference Article
Year 2009 Publication Proc. 20th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 35-35
Keywords SIS mixer, noise temperature
Abstract We report the development of a low noise and broadband SIS mixer aimed for 1 THz channel of the Caltech Airborne Submillimeter Interstellar Medium Investigations Receiver (CASIMIR), designed for the Stratospheric Observatory for Far Infrared Astronomy, (SOFIA). The mixer uses an array of 0.24 µm² Nb/Al-AlN/NbTiN SIS junctions with critical current density of 30-50 KA/cm². The junctions are shaped in order to optimize the suppression of the Josephson DC currents. We are using a double slot planar antenna to couple the mixer chip with the telescope beam. The RF matching microcircuit is made using Nb and gold films. The mixer IF circuit is designed to cover 4 – 8 GHz band. A test receiver with the new mixer has a low noise operation in a 0.87 – 1.12 THz band. The minimum DSB receiver noise measured at 1 THz is 260 K (Y=1.64), apparently the lowest reported up to date. The receiver noise corrected for the loss in the LO injection beam splitter and in the cryostat window is 200 K. The combination of a broad operation band of about 250 GHz with a low receiver noise is making the new mixer a useful element for application at SOFIA. We will discuss the prospective of a further improvement of the sensitivity and extension of the upper frequency of operation of SIS mixer.
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Notes Approved no
Call Number Serial 614
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