Records |
Author |
Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. |
Title |
Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range |
Type |
Journal Article |
Year |
2003 |
Publication |
IEEE Microw. Wireless Compon. Lett. |
Abbreviated Journal |
IEEE Microw. Wireless Compon. Lett. |
Volume |
13 |
Issue |
11 |
Pages |
493-495 |
Keywords |
waveguide NbN HEB mixers |
Abstract |
We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz. |
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1531-1309 |
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1509 |
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Author |
Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. |
Title |
A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator |
Type |
Conference Article |
Year |
2003 |
Publication |
IEEE MTT-S Int. Microwave Symp. Digest |
Abbreviated Journal |
IEEE MTT-S Int. Microwave Symp. Digest |
Volume |
2 |
Issue |
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Pages |
751-754 |
Keywords |
waveguide NbN HEB mixers |
Abstract |
We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W. |
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Philadelphia, PA, USA |
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1516 |
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Author |
Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. |
Title |
A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations |
Type |
Journal Article |
Year |
2004 |
Publication |
IEEE Trans. Microwave Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microwave Theory Techn. |
Volume |
52 |
Issue |
10 |
Pages |
2338-2343 |
Keywords |
NbN HEB mixer, applications |
Abstract |
In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile. |
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0018-9480 |
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1484 |
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Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
Type |
Journal Article |
Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
Volume |
32 |
Issue |
7 |
Pages |
075003 |
Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
Serial |
1277 |
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