|
Records |
Links |
|
Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
|
|
Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
|
Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
|
|
Volume |
|
Issue |
|
Pages |
369-371 |
|
|
Keywords |
silicon detector, quantum dot, IR, surface states |
|
|
Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
978-5-89513-451-1 |
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1154 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
|
|
Title |
Carrier lifetime in excited states of shallow impurities in germanium |
Type |
Journal Article |
|
Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
25 |
Issue |
12 |
Pages |
539-543 |
|
|
Keywords |
Ge, shallow impurities, excited states |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1726 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
|
|
Title |
Investigation of population and ionization of donor excited states in Ge |
Type |
Conference Article |
|
Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
|
|
Volume |
|
Issue |
|
Pages |
631-634 |
|
|
Keywords |
Ge, donor excited states |
|
|
Abstract |
|
|
|
Address |
Amsterdam |
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
North-Holland Publishing Co. |
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1732 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
|
|
Title |
Population of excited-states of small admixtures in germanium |
Type |
Conference Article |
|
Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
|
|
Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
|
|
Keywords |
Ge, excited states, admixtures |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1723 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
|
|
Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
|
Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
|
|
Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
|
|
Keywords |
GaAs, excited donor states |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1733 |
|
Permanent link to this record |