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O'Neal, C. (2010). A project guide to rocks and minerals.
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Loenen, A. F., van der Werf, P. P., Güsten, R., Meijerink, R., Israel, F. P., Requena-Torres, M. A., et al. (2010). Excitation of the molecular gas in the nuclear region of M 82. Astron. Astrophys., 521, L2.
Abstract: We present high-resolution HIFI spectroscopy of the nucleus of the archetypical starburst galaxy M 82. Six 12CO lines, 2 13CO lines and 4 fine-structure lines have been detected. Besides showing the effects of the overall velocity structure of the nuclear region, the line profiles also indicate the presence of multiple components with different optical depths, temperatures, and densities in the observing beam. The data have been interpreted using a grid of PDR models. It is found that the majority of the molecular gas is in low density (n = 103.5 cm-3) clouds, with column densities of NH = 1021.5 cm-2 and a relatively low UV radiation field (G0 = 102). The remaining gas is predominantly found in clouds with higher densities (n = 105 cm-3) and radiation fields (G0 = 102.75), but somewhat lower column densities (NH = 1021.2 cm-2). The highest J CO lines are dominated by a small (1% relative surface filling) component, with an even higher density (n = 106 cm-3) and UV field (G0 = 103.25). These results show the strength of multi-component modelling for interpretating the integrated properties of galaxies.
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Terai, H., Miki, S., Yamashita, T., Makise, K., & Wang, Z. (2010). Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors. Appl. Phys. Lett., 97(11), 3.
Abstract: A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Tanner, M. G., Natarajan, C. M., Pottapenjara, V. K., O'Connor, J. A., Warburton, R. J., Hadfield, R. H., et al. (2010). Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon. Appl. Phys. Lett., 96(22), 3.
Abstract: Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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