|
|
Бурмистрова, А. В., & Девятов, И. А. (2014). Расчет электронного транспорта в гетероструктурах, содержащих многозонные сверхпроводники. In Труды XVIII международного симпозиума «Нанофизика и наноэлектроника» (Vol. 1, pp. 21–22).
Abstract: В рамках приближения сильной связи теоретически рассчитаны проводимости контактов вида нормальный металл/изолятор/одноорбитальный сверхпроводник с p-типом сверхпроводящего спаривания (N/I/Sp). Объяснено наблюдаемое экспериментально как появление пика при нулевом напряжении, так и его расщепление в зависимости от толщины слоя изолятора. В рамках этой же микроскопической теории развит вариант техники решеточной функции Грина в мацубаровом представлении. Используя разработанный подход, рассчитаны фазовые и температурные зависимости тока Джозефсона для контакта сверхпроводника s-типа и многозонного железосодержащего сверхпроводника (ферропниктида) для различных ориентаций границы по отношению к кристаллографическим осям пниктида.
|
|
|
|
Goltsman, G. (2019). Quantum-photonic integrated circuits. In Proc. IWQO (pp. 22–23).
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
|
|
|
|
Shurakov, A., Mikhalev, P., Mikhailov, D., Mityashkin, V., Tretyakov, I., Kardakova, A., et al. (2018). Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer. Microelectronic Engineering, 195, 26–31.
Abstract: In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
|
|
|
|
Shcherbatenko, M., Lobanov, Y., Benderov, O., Shurakov, A., Ignatov, A., Titova, N., et al. (2015). Antenna-coupled 30 THz hot electron bolometer mixers. In Proc. 26th Int. Symp. Space Terahertz Technol. (27).
Abstract: We report on design and characterization of a superconducting Hot Electron Bolometer Mixer integrated with a logarithmic spiral antenna for mid-IR range observations. The antenna parameters have been adjusted to achieve the ultimate performance at 10 µm (30 THz) range where O3, NH3, CO2, CH4, N2O,…. lines in the Earth’s atmosphere, in planetary atmospheres and in the interstellar space can be observed. The HEB mixer is made of a thin NbN film deposited onto a GaAs substrate. To couple the radiation we rely on the quasioptical approach: the device is glued to a semi-spherical germanium lens with diameter~ 3 mm. A wet cryostat equipped with a germanium window and narrow band-pass filter is used to characterize the antenna and estimate the mixer performance.
|
|
|
|
Ekström, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 29–35).
Abstract: We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
|
|
