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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
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Year |
1974 |
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Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
7 |
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10 |
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1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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Title |
High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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Journal Article |
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2012 |
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Nat. Commun. |
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Nat. Commun. |
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3 |
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1325 (1 to 10) |
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Keywords |
waveguide SSPD |
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Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
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Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
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2041-1723 |
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PMID:23271658; PMCID:PMC3535416 |
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1375 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Title |
Germanium hot-electron narrow-band detector |
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Journal Article |
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Year |
1971 |
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Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
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Volume |
16 |
Issue |
8 |
Pages |
1346 |
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Keywords |
Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. |
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Ultrafast superconducting single-photon detector |
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Journal Article |
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2009 |
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J. Modern Opt. |
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J. Modern Opt. |
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Volume |
56 |
Issue |
15 |
Pages |
1670-1680 |
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Keywords |
SSPD, SNSPD |
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The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented. |
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0950-0340 |
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RPLAB @ akorneev @ |
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607 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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High resolution THz gas spectrometer based on semiconductor and superconductor devices |
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Conference Article |
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2017 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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132 |
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02001 (1 to 2) |
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Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
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The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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