| Records |
| Author |
Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
| Title |
An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
15 |
Issue |
2 |
Pages  |
472-475 |
| Keywords |
HEB mixer |
| Abstract |
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| Publisher |
IEEE |
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no |
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Serial |
371 |
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| Author |
Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; Voronov, B.; de Korte, P.; Gol'tsman, G. |
| Title |
NbN hot electron bolometer mixers: sensitivity, LO power, direct detection and stability |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue |
2 |
Pages |
484-489 |
| Keywords |
HEB mixers, direct detection effect, stability, Allan variance |
| Abstract |
We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. Both the receiver noise temperature and the gain bandwidth can be improved by a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature of 950 K at 2.5 THz and 4.3 K, using a 0.4/spl times/4 /spl mu/m HEB mixer with a spiral antenna. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. To comply with current demands on THz mixers for use in space based receivers we reduce the device size to 0.15/spl times/1 /spl mu/m and use a twin slot antenna. We report measurements of the noise temperature, LO power requirement, stability and the direct detection effect, using a mixer with a 1.6 THz twin slot antenna and a 1.462 THz solid state LO source with calibrated output power. |
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Edition |
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| ISSN |
1051-8223 |
ISBN |
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no |
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Serial |
546 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
Type |
Journal Article |
| Year |
1990 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
76 |
Issue |
4 |
Pages |
493-497 |
| Keywords |
YBCO HTS detectors |
| Abstract |
The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable. |
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Edition |
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| ISSN |
0038-1098 |
ISBN |
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no |
| Call Number |
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Serial |
1685 |
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| Author |
Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue |
2 |
Pages |
495-498 |
| Keywords |
HEB mixer distributed model, HEB distributed model, distributed HEB model |
| Abstract |
Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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Edition |
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| ISSN |
1051-8223 |
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no |
| Call Number |
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Serial |
980 |
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| Author |
Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. |
| Title |
Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector |
Type |
Journal Article |
| Year |
1991 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
80 |
Issue |
7 |
Pages |
503-506 |
| Keywords |
Nb detector, applications |
| Abstract |
We studied the far-infrared emission characteristics of a cyclotron p-germanium laser using a broad-band superconducting Nb film detector. For magnetic fields between ∼25 kOe and ∼50 kOe, emission in a frequency range from ∼50 cm-1 to ∼100 cm-1 with maximum intensity around 90 cm-1 was obtained. We determined, for fixed magnetic fields, electric field dependences of the emission intensity taking into account that the total electric field is a sum of the applied and the Hall electric field. An analysis of the emission intensity characteristic gives evidence that transitions between the two lowest Landau levels of light holes are responsible for the laser action. |
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Edition |
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| ISSN |
0038-1098 |
ISBN |
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no |
| Call Number |
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Serial |
1677 |
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| Author |
Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. |
| Title |
A high resolution spectrometer for the investigation of molecular structures in the THZ range |
Type |
Conference Article |
| Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
530-538 |
| Keywords |
antireflection coatings, dielectric mirrors |
| Abstract |
A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%. |
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no |
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Serial |
1577 |
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| Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
| Title |
Carrier lifetime in excited states of shallow impurities in germanium |
Type |
Journal Article |
| Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
25 |
Issue |
12 |
Pages |
539-543 |
| Keywords |
Ge, shallow impurities, excited states |
| Abstract |
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Approved |
no |
| Call Number |
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Serial |
1726 |
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| Author |
Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R. |
| Title |
Origin of dark counts in nanostructured NbN single-photon detectors |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue |
2 |
Pages |
545-548 |
| Keywords |
SSPD dark counts, SNSPD, dark counts rate |
| Abstract |
We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations. |
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Approved |
no |
| Call Number |
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Serial |
1057 |
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| Author |
Gol'tsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Słysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, Roman |
| Title |
Superconducting nanostructured detectors capable of single-photon counting in the THz range |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
555-557 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present the results of the NbN superconducting single-photon detector sensitivity measurement in the visible to mid-IR range. For visible and near IR light (0.56 — 1.3μm wavelengths) the detector exhibits 30% quantum efficiency saturation value limited by the NbN film absorption and extremely low level of dark counts (2x10 -4 s -1). The detector manifested single-photon counting up to 6 μm wavelength with the quantum efficiency reaching 10 -2 % at 5.6 μm and 3 K temperature. |
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Approved |
no |
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Serial |
1476 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
| Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
Type |
Journal Article |
| Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
45 |
Issue |
3 |
Pages |
555-565 |
| Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
| Abstract |
The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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Approved |
no |
| Call Number |
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Serial |
1728 |
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| Author |
Smirnov, A. V.; Baryshev, A. M.; de Bernardis, P.; Vdovin, V. F.; Gol'tsman, G. N.; Kardashev, N. S.; Kuz'min, L. S.; Koshelets, V. P.; Vystavkin, A. N.; Lobanov, Yu. V.; Ryabchun, S. A.; Finkel, M. I.; Khokhlov, D. R. |
| Title |
The current stage of development of the receiving complex of the millimetron space observatory |
Type |
Journal Article |
| Year |
2012 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
54 |
Issue |
8 |
Pages |
557-568 |
| Keywords |
Millimetron space observatory, HEB applications |
| Abstract |
We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported. |
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no |
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Serial |
1079 |
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| Author |
Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
| Title |
The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
Type |
Journal Article |
| Year |
2016 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
|
| Volume |
42 |
Issue |
6 |
Pages |
563-566 |
| Keywords |
HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection |
| Abstract |
Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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Approved |
no |
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Serial |
1106 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
Type |
Journal Article |
| Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
| Volume |
361-362 |
Issue |
|
Pages |
569-573 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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Edition |
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| ISSN |
0039-6028 |
ISBN |
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Approved |
no |
| Call Number |
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Serial |
1609 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
| Title |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
Type |
Journal Article |
| Year |
1978 |
Publication |
Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
| Volume |
20 |
Issue |
4 |
Pages |
573-579 |
| Keywords |
p-Ge, free carriers, resonances |
| Abstract |
The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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Approved |
no |
| Call Number |
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Serial |
1721 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
| Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
33 |
Issue |
11 |
Pages |
574 |
| Keywords |
Ge, excitons, photoconductivity |
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| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1718 |
| Permanent link to this record |
