| |
Author |
Title |
Year |
Publication |
Volume |
Pages  |
Links |
|
|
Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. |
A high resolution spectrometer for the investigation of molecular structures in the THZ range |
1999 |
Proc. 10th Int. Symp. Space Terahertz Technol. |
|
530-538 |
|
|
|
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
|
|
|
Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R. |
Origin of dark counts in nanostructured NbN single-photon detectors |
2005 |
IEEE Trans. Appl. Supercond. |
15 |
545-548 |
|
|
|
Gol'tsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Słysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, Roman |
Superconducting nanostructured detectors capable of single-photon counting in the THz range |
2005 |
Proc. 16th Int. Symp. Space Terahertz Technol. |
|
555-557 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
555-565 |
|
|
|
Smirnov, A. V.; Baryshev, A. M.; de Bernardis, P.; Vdovin, V. F.; Gol'tsman, G. N.; Kardashev, N. S.; Kuz'min, L. S.; Koshelets, V. P.; Vystavkin, A. N.; Lobanov, Yu. V.; Ryabchun, S. A.; Finkel, M. I.; Khokhlov, D. R. |
The current stage of development of the receiving complex of the millimetron space observatory |
2012 |
Radiophys. Quant. Electron. |
54 |
557-568 |
|
|
|
Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
2016 |
Tech. Phys. Lett. |
42 |
563-566 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
1978 |
Sov. Phys. Solid State |
20 |
573-579 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
33 |
574 |
|
