Abstract: We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature.

Abstract: Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near infrared wavelengths. Taking advantage of recent results obtained in the Sinphonia project, the goal of our research is to demonstrate the feasibility of a new family of micro-spectrometers, called SWIFTS (Stationary Wave Integrated Fourier Transform Spectrometer), associated to an array of SSPD, the whole assembly being integrated on a monolithic sapphire substrate coupling the detectors array to a waveguide injecting the light. This unique association will create a major breakthrough in the domain of visible and infrared spectroscopy for all applications where the space and weight of the instrument is limited. SWIFTS is an innovative way to achieve very compact spectro-detectors using nano-detectors coupled to evanescent field of dielectric integrated optics. The system is sensitive to the interferogram inside the dielectric waveguide along the propagation path. Astronomical instruments will be the first application of such SSPD spectrometers. In this paper, we describes in details the fabrication process of our SSPD built at CEA/DRFMC using ultra-thin NbN epitaxial films deposited on different orientations of Sapphire substrates having state of the art superconducting characteristics. Electron beam lithography is routinely used for patterning the devices having line widths below 200 nm and down to 70 nm. An experimental set-up has been built and used to test these SSPD devices and evaluate their photon counting performances. Photon counting performances of our devices have been demonstrated with extremely low dark counts giving excellent signal to noise ratios. The extreme compactness of this concept is interesting for space spectroscopic applications. Some new astronomical applications of such concept are proposed in this paper.

Abstract: NbN hot electron bolometer mixers (HEBM) are at this moment the best heterodyne receivers for frequencies above 1 Thz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. The result is a low transparency interface between the bolometer itself and the contact/antenna structure. In this paper we report a detailed experimental study on a novel idea to increase the transparency of this interface. This leads to a record sensitivity and more reproducible performance. We compare identical bolometers, coupled with a spiral antenna, with different NbN bolometer-contact pad interfaces. We find that cleaning the NbN interface alone results in an increase in the noise temperature. However, cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature of the HEBm with more than a factor of 2. A device with a contact pad on top of an in-situ cleaned NbN film consisting of 10 nm of NbTiN and 40 nm of gold has a DSB noise temperature of 1050 K at 2.5 THz.