Records |
Author |
Hesler, J. L.; Hall, W. R.; Crowe, T. W.; Weikle, R. M.; Bradley, R. F.; Pan, Shing-Kuo |
Title |
Submm wavelenght waveguide mixers using planar Schottky barier diods |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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462 |
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270 |
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Author |
Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M. |
Title |
First results for a 2.5 THz Schottky diode waveguide mixer |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
494 |
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Charlottesville, Virginia, USA |
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265 |
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Author |
Betz, A. L.; Borejko, R. T. |
Title |
A practical Schottky mixer for 5 THz |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
503 |
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no |
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269 |
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Author |
van de Stadt, H. |
Title |
An improved 1 THz waveguide mixer |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Volume |
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Pages |
536 |
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Charlottesville, Virginia, USA |
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Probably other authors exist. |
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263 |
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Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
Type |
Journal Article |
Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
Volume |
361-362 |
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Pages |
569-573 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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0039-6028 |
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Serial |
1609 |
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