Abstract: Рассмотрена возможность применения сверхпроводникового однофотонного детектора, разрешающего число фотонов, в качестве датчика приёмных модулей телекоммуникационных линий. Показано, что для достижения доли ошибочных битов на уровне 10-11 достаточно на два порядка меньшей мощности в оптическом импульсе, чем при использовании существующих приёмных модулей.

Abstract: Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip.

Abstract: We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the two-spot detection efficiency and extract the hot-spot interaction length of superconducting nanowire single photon detectors (SNSPDs) with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm.

Abstract: Traditionally, photon detectors are operated in a direct detection mode counting incident photonswith a known quantum efficiency. This procedure allows one to detect weak sources of radiation but allthe information about its frequency is limited by the optical filtering/resonating structures used which arenot as precise as would be required for some practical applications. In this work we propose heterodynereceiver based on a photon counting mixer which would combine excellent sensitivity of a photon countingdetector and excellent spectral resolution given by the heterodyne technique. At present, Superconducting-Nanowire-Single-Photon-Detectors (SNSPDs) [1] are widely used in a variety of applications providing thebest possible combination of the sensitivity and speed. SNSPDs demonstrate lack of drawbacks like highdark count rate or autopulsing, which are common for traditional semiconductor-based photon detectors,such as avalanche photon diodes.In our study we have investigated SNSPD operated as a photon counting mixer. To fully understandits behavior in such a regime, we have utilized experimental setup based on a couple of distributedfeedback lasers irradiating at 1.5 micrometers, one of which is being the Local Oscillator (LO) and theother mimics the test signal [2]. The SNSPD was operated in the current mode and the bias currentwas slightly below of the critical current. Advantageously, we have found that LO power needed for anoptimal mixing is of the order of hundreds of femtowatts to a few picowatts, which is promising for manypractical applications, such as receiver matrices [3]. With use of the two lasers, one can observe thevoltage pulses produced by the detected photons, and the time distribution of the pulses reproduces thefrequency difference between the lasers, forming power response at the intermediate frequency which canbe captured by either an oscilloscope (an analysis of the pulse statistics is needed) or by an RF spectrumanalyzer. Photon-counting nature of the detector ensures quantum-limited sensitivity with respect to theoptical coupling achieved. In addition to the chip SNSPD with normal incidence coupling, we use thedetectors with a travelling wave geometry design [4]. In this case a NbN nanowire is placed on the topof a Si3N4 nanophotonic waveguide, thus increasing the efficient interaction length. For this reason it ispossible to achieve almost complete absorption of photons and reduce the detector footprint. This reducesthe noise of the device together with the expansion of the bandwidth. Integrated device scheme allowsus to measure the optical losses with high accuracy. Our approach is fully scalable and, along with alarge number of devices integrated on a single chip can be adapted to the mid and far IR ranges wherephoton-counting measurement may be beneficial as well [5].Acknowledgements: This work was supported in part by the Ministry of Education and Science of theRussian Federation, contract No. 14.B25.31.0007 and by RFBR grant No. 16-32-00465.

Abstract: Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.