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Чулкова, Г. М.; Семенов, А. В.; Корнеев, А. А.; Кардакова, А. И.; Аверьев, Н. В.; Ан, П. П.; Казаков, А. Ю.; Трифонов, А. В. |
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Спектральная чувствительность сверхпроводникового однофотонного детектора |
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2011 |
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Журнал радиоэлектроники |
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Ж. радиоэлектрон. |
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11 |
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5 |
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SSPD; quantum efficiency; spectral sensitivity |
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We consider quantum efficiency dependence on photons' energy from hot spot model. Direction of quasiparticles diffusion drive across superconductive film. The maximal quantum efficiency is proportional to a probability of photon absorption. The spectral sensitivity of superconductive single photon detector does not have clearly expressed red limit. Changing regimes of work depends on a wavelength we can get high values of quantum efficiency in visible and infrared range which will be specified by the quality of fabrication of detectors and their consistency with the radiation.
Key words: superconducting single-photon detector, SSPD, quantum efficiency, spectral sensitivity.
В статье представлена зависимость квантовой эффективности от энергии фотона в рамках модели горячего пятна. Диффузия квазичастиц происходит в основном перпендикулярно направлению тока в областях с максимальной плотностью тока. Максимальная квантовая эффективность детектора пропорциональна вероятности поглощения фотона. Несмотря на квантовый характер работы сверхпроводникового однофотонного детектора, он не имеет четко выраженной красной границы. Изменяя режим работы в зависимости от длины волны можно в видимом и инфракрасном диапазонах получать высокие значения квантовой эффективности, которые будут определяться лишь качеством изготовления детекторов и степенью их согласования с излучением. |
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RPLAB @ gujma @ |
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844 |
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Dorenbos, S. N.; Heeres, R.W.; Driessen, E.F.C; Zwiller, V. |
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Title |
Efficient and robust fiber coupling of superconducting single photon detectors |
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Journal Article |
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2011 |
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arXiv |
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arXiv |
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6 |
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SSPD |
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We applied a recently developed fiber coupling technique to superconducting single photon detectors (SSPDs). As the detector area of SSPDs has to be kept as small as possible, coupling to an optical fiber has been either inefficient or unreliable. Etching through the silicon substrate allows fabrication of a circularly shaped chip which self aligns to the core of a ferrule terminated fiber in a fiber sleeve. In situ alignment at cryogenic temperatures is unnecessary and no thermal stress during cooldown, causing misalignment, is induced. We measured the quantum efficiency of these devices with an attenuated tunable broadband source. The combination of a lithographically defined chip and high precision standard telecommunication components yields near unity coupling efficiency and a system detection efficiency of 34% at a wavelength of 1200 nm. This quantum efficiency measurement is confirmed by an absolute efficiency measurement using correlated photon pairs (with $\lambda$ = 1064 nm) produced by spontaneous parametric down-conversion. The efficiency obtained via this method agrees well with the efficiency measured with the attenuated tunable broadband source. |
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arXiv:1109.5809 |
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RPLAB @ gujma @ |
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689 |
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Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried |
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Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers |
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2011 |
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Nanoscale Research Letters |
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Nanoscale res lett |
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6 |
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1 |
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6 |
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Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes |
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Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV. |
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RPLAB @ gujma @ |
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712 |
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Peruzzo, Alberto; Laing, Anthony; Politi, Alberto; Rudolph, Terry; O'Brien, Jeremy L. |
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Multimode quantum interference of photons in multiport integrated devices |
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2011 |
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Nature Communications |
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Nat. Comm. |
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2 |
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224 |
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6 |
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fromIPMRAS |
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Photonics is a leading approach in realizing future quantum technologies and recently, optical waveguide circuits on silicon chips have demonstrated high levels of miniaturization and performance. Multimode interference (MMI) devices promise a straightforward implementation of compact and robust multiport circuits. Here, we show quantum interference in a 2×2 MMI coupler with visibility of V=95.6+/-0.9%. We further demonstrate the operation of a 4×4 port MMI device with photon pairs, which exhibits complex quantum interference behaviour. We have developed a new technique to fully characterize such multiport devices, which removes the need for phase-sensitive measurements and may find applications for a wide range of photonic devices. Our results show that MMI devices can operate in the quantum regime with high fidelity and promise substantial simplification and concatenation of photonic quantum circuits. |
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RPLAB @ gujma @ |
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763 |
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Crespi, Andrea; Ramponi, Roberta; Osellame, Roberto; Sansoni, Linda; Bongioanni, Irene; Sciarrino, Fabio; Vallone, Giuseppe; Mataloni, Paolo |
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Integrated photonic quantum gates for polarization qubits |
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2011 |
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Nature Communications |
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Nat. Comm. |
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2 |
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566 |
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6 |
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fromIPMRAS |
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The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography. |
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