Fedorov, G., Kardakova, A., Gayduchenko, I., Charayev, I., Voronov, B. M., Finkel, M., et al. (2013). Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation. Appl. Phys. Lett., 103(18), 181121 (1 to 5).
Abstract: We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
|
Sidorova, M. V., Kozorezov, A. G., Semenov, A. V., Korneeva, Y. P., Mikhailov, M. Y., Devizenko, A. Y., et al. (2018). Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films. Phys. Rev. B, 97(18), 184512 (1 to 13).
Abstract: We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
|
Gayduchenko, I., Kardakova, A., Fedorov, G., Voronov, B., Finkel, M., Jiménez, D., et al. (2015). Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation. J. Appl. Phys., 118(19), 194303.
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
|
Rasulova, G. K., Pentin, I. V., Vakhtomin, Y. B., Smirnov, K. V., Khabibullin, R. A., Klimov, E. A., et al. (2020). Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime. J. Appl. Phys., 128(22), 224303 (1 to 11).
Abstract: The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
|
Gayduchenko, I. A., Fedorov, G. E., Moskotin, M. V., Yagodkin, D. I., Seliverstov, S. V., Goltsman, G. N., et al. (2018). Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices. Nanotechnol., 29(24), 245204 (1 to 8).
Abstract: We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
|
