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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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5 |
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185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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Wild, Wolfgang; Baryshev, Andrey; de Graauw, Thijs; Kardashev, Nikolay; Likhachev, Sergey; Goltsman, Gregory; Koshelets, Valery |
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Instrumentation for Millimetron – a large space antenna for THz astronomy |
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Conference Article |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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186-191 |
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Millimetron space observatory, VLBI |
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Millimetron is a Russian-led 12m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation and funded for launch after 2015. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron is currently in a conceptual design phase carried out by the Astro Space Center in Moscow and SRON Netherlands Institute for Space Research. It will use a passively cooled deployable antenna with a high-precision central 3.5m diameter mirror and high- precision antenna petals. The antenna is specified for observations up to ~2 THz over the whole 12m diameter, and to higher frequencies using the central 3.5m solid mirror. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space VLBI system. As single-dish, angular resolutions on the order of 3 to 12 arcsec will be achieved and spectral resolutions of up to 10 6 employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines resulting in micro-arcsec angular resolution. The scientific payload will consist of heterodyne and direct detection instruments covering the most important sub-/millimeter spectral regions (including some ALMA bands) and will build on the Herschel and ALMA heritage. |
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1412 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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Conference Article |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
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NbN HEB mixers |
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We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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190-199 |
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NbN HEB mixers |
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We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit. |
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1573 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches |
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1992 |
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Progress in High Temperature Superconductivity |
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Progress in High Temperature Superconductivity |
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32 |
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190-195 |
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superconducting films, heating of electrons |
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International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991 |
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https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 |
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1666 |
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