Blundell, R., Kawamura, J. H., Tong, C. E., Papa, D. C., Hunter, T. R., Gol’tsman, G. N., et al. (1998). A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range. In Proc. 6-th Int. Conf. Terahertz Electron. (pp. 18–20). IEEE.
Abstract: We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 23–28).
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
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Shurakov, A., Mikhalev, P., Mikhailov, D., Mityashkin, V., Tretyakov, I., Kardakova, A., et al. (2018). Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer. Microelectronic Engineering, 195, 26–31.
Abstract: In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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Kitaygorsky, J., Komissarov, I., Jukna, A., Sobolewski, R., Minaeva, O., Kaurova, N., et al. (2006). Nanosecond, transient resistive state in two-dimensional superconducting stripes. In Proc. APS March Meeting (H38.13).
Abstract: We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures.
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Semenov, A. D., Hübers, H. –W., Schubert, J., Gol'tsman, G. N., Elantiev, A. I., Voronov, B. M., et al. (2000). Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 39–48).
Abstract: We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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