Abstract: Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.
We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP).

Abstract: We investigate the recovery of superconducting NbN-nanowire photon counters after detection of an optical pulse at a wavelength of 1550nm, and present a model that quantitatively accounts for our observations. The reset time is found to be limited by the large kinetic inductance of these nanowires, which forces a tradeoff between counting rate and either detection efficiency or active area. Devices of usable size and high detection efficiency are found to have reset times orders of magnitude longer than their intrinsic photoresponse time.
The authors acknowledge D. Oates and W. Oliver (MIT Lincoln Laboratory), S.W. Nam, A. Miller, and R. Hadfield (NIST) and R. Sobolewski, A. Pearlman, and A. Verevkin (University of Rochester) for helpful discussions and technical assistance. This work made use of MIT’s shared scanning-electron-beam-lithography facility in the Research Laboratory of Electronics. This work is sponsored by the United States Air Force under Air Force Contract No. FA8721-05-C-0002. Opinions, interpretations, recommendations and conclusions are those of the authors and are not necessarily endorsed by the United States Government.

Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.