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Author Title Year Publication DOI
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 10.1134/1.1434290
Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride 1997 Tech. Phys. Lett. 10.1134/1.1261724
Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range 2003 IEEE Microw. Wireless Compon. Lett. 10.1109/LMWC.2003.817133
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation 1990 Solid State Communications 10.1016/0038-1098(90)90656-V
Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. Amplification of a Raman scattering signal by carbon nanotubes 2018 Dokl. Phys. 10.1134/S1028335818120066