Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. - W., et al. (1998). Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies. In Proc. 6-th Int. Conf. Terahertz Electron. (pp. 149–152).
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
|
|
Goltsman, G. N., Vachtomin, Y. B., Antipov, S. V., Finkel, M. I., Maslennikov, S. N., Polyakov, S. L., et al. (2005). Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers. In Proc. 9-th WMSCI (Vol. 9, pp. 154–159). International Institute of Informatics and Systemics.
|
Meledin, D., Tong, C. Y. - E., Blundell, R., Kaurova, N., Smirnov, K., Voronov, B., et al. (2003). Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer. IEEE Trans. Appl. Supercond., 13(2), 164–167.
Abstract: In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
|
Semenov, A. D., Hübers, H. - W., Richter, H., Smirnov, K., Gol'tsman, G. N., & Voronov, B. M. (2004). Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers. In Proc. 15th Int. Symp. Space Terahertz Technol. (164).
Abstract: A number of on-going astronomical and atmospheric research programs are aimed to the Terahertz (THz) spectral region. At frequencies above about 1.4 THz heterodyne receivers planned for these missions will use superconducting hot-electron bolometers as a mixers. We present current results on the development of superconducting NbN hot- electron bolometer mixer and quasioptical radiation coupling scheme for GREAT (German Receiver for Astronomy at Terahertz Frequencies, to be used aboard of SOFIA) and TELIS (Terahertz Limb Sounder). The mixer is incorporated into hybrid antenna consisting of a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and hyperhemispherical silicon lens. For the log-spiral feed antenna, the double side-band receiver noise temperature of 5500 K was achieved at 4.3 THz. The noise temperature shows less than 3 dB increase in the intermediate frequency band from 4 GHz to 7 GHz. The hybrid antenna had almost frequency independent and symmetric radiation pattern with the beam-width slightly broader than expected for a diffraction limited pattern. Results of FTS measurements in the direct detection regime agreed with the spectral dependence of the noise temperature for spiral antennas with different spacing of inner terminals.
|
Semenov, A. D., Hübers, H. - W., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2003). Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers. IEEE Trans. Appl. Supercond., 13(2), 168–171.
Abstract: We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz.
|
Tong, C. E., Trifonov, A., Blundell, R., Shurakov, A., & Gol’tsman, G. (2014). A digital terahertz power meter based on an NbN thin film. In Proc. 25th Int. Symp. Space Terahertz Technol. (170).
Abstract: We have further studied the effect of subjecting a superconducting Hot Electron Bolometer (HEB) element made from an NbN thin film to microwave radiation. Since the photon energy is weak, the microwave radiation does not simply heat the film, but generates a bi-static state, switching between the superconducting and normal states, upon the application of a small voltage bias. Indeed, a relaxation oscillation of a few MHz has previously been reported in this regime [1]. Switching between the superconducting and normal states modulates the reflected microwave pump power from the device. A simple homodyne setup readily recovers the spontaneous switching waveform in the time domain. The switching frequency is a function of both the bias voltage (DC heating) and the applied microwave power. In this work, we use a 0.8 THz HEB waveguide mixer for the purpose of demonstration. The applied microwave pump, coupled through a directional coupler, is at 1 GHz. Since the pump power is of the order of a few μW, a room temperature amplifier is sufficient to amplify the reflected pump power from the HEB mixer, which beats with the microwave source in a homodyne set-up. After further amplification, the switching waveform is passed onto a frequency counter. The typical frequency of the switching pulses is 3-5 MHz. It is found that the digital frequency count increases with higher microwave pump power. When the HEB mixer is subjected to additional optical power at 0.8 THz, the frequency count also increases. When we vary the incident optical power by using a wire grid attenuator, a linear relationship is observed between the frequency count and the applied optical power, over at least an order of magnitude of power. This phenomenon can be exploited to develop a digital power meter, using a very simple electronics setup. Further experiments are under way to determine the range of linearity and the accuracy of calibration transfer from the microwave to the THz regime. References 1. Y. Zhuang, and S. Yngvesson, “Detection and interpretation of bistatic effects in NbN HEB devices,” Proc. 13 th Int. Symp. Space THz Tech., 2002, pp. 463–472.
|
Maslennikov, S. N., Finkel, M. I., Antipov, S. V., Polyakov, S. L., Zhang, W., Ozhegov, R., et al. (2006). Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 177–179). Paris, France.
Abstract: We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.
|
Gol’tsman, G. N., & Gershenzon, E. M. (1993). High speed hot-electron superconducting bolometer. In J. R. Birch, & T. J. Parker (Eds.), Proc. SPIE (Vol. 2104, pp. 181–182). SPIE.
Abstract: Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
|
Semenov, A., Richter, H., Smirnov, A., Günther, B., Hübers, H. - W., Il’in, K., et al. (2007). Development of HEB mixers for GREAT and for security screening. In Proc. 18th Int. Symp. Space Terahertz Technol. (184).
Abstract: We report the study on the quasioptical coupling efficiency and the gain bandwidth of NbN hot-electron bolometer mixers developed for the 4.7 THz channel of the German receiver for Astronomy at THz-frequencies (GREAT) and for security screening at subterahertz frequencies. Radiation coupling efficiency and directive properties of integrated lens antennas with log-spiral, log-periodic and double-slot planar feeds coupled to a hot-electron bolometer were experimentally studied at frequencies from 1 THz to 6 THz and compared with simulations based on the method of moments and the physical-optics ray tracing. For all studied antennas the modeled spectral dependence of the coupling efficiency fits to the experimental data obtained with both Fourier transform spectroscopy and noise temperature measurements only if the complex impedance of the bolometer is explicitly taken into account. Our experimental data did not indicate any noticeable contribution of the quantum noise to the system noise temperature. The experimentally observed deviation of the beam pattern from the model prediction increases with frequency and is most likely due to a non- ideality of the presently used lenses. Study of the intermediate frequency mixer gain at local oscillator (LO) frequencies between 2.5 THz and 0.3 THz showed an increase of the gain bandwidth at low LO frequencies that was understood as the contribution of the direct interaction of magnetic vortices with the radiation field. We have found that the non- homogeneous hot-spot model more adequately describes variation of the intermediate frequency bandwidth with the applied local oscillator power than any of uniform mixer models. The state-of-the-day performance of the GREAT 4.7-THz channel and the 0.8-THz security scanner will be presented.
|
Gao, J. R., Hajenius, M., Tichelaar, F. D., Voronov, B., Grishina, E., Klapwijk, T. M., et al. (2006). Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 187–189).
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
|
