| Records |
| Author |
Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
| Title |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
Type |
Journal Article |
| Year |
2001 |
Publication |
J. Vac. Sci. Technol. B |
Abbreviated Journal |
J. Vac. Sci. Technol. B |
| Volume |
19 |
Issue |
6 |
Pages  |
2766-2769 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. |
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| ISSN |
0734211X |
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1542 |
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| Author |
Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
| Title |
Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
9 |
Issue |
2 |
Pages |
3338-3341 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. |
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| ISSN |
1051-8223 |
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no |
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1566 |
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| Author |
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
| Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
Type |
Journal Article |
| Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
26 |
Pages |
3938-3940 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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| ISSN |
0003-6951 |
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1579 |
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| Author |
Verevkin, A.; Zhang, J.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Gol'tsman, G. N.; Semenov, A. |
| Title |
Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range |
Type |
Journal Article |
| Year |
2002 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
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| Volume |
80 |
Issue |
25 |
Pages |
4687-4689 |
| Keywords |
NbN SSPD, SNSPD, QE |
| Abstract |
We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications. |
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331 |
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Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
| Title |
Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012011 (1 to 5) |
| Keywords |
WSi, NbN SSPD, SNSPD |
| Abstract |
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1757-899X |
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no |
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1799 |
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