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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages (up) 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Notes Approved no
Call Number Serial 1711
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 64 Issue 5 Pages (up) 404-409
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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ISSN 0021-3640 ISBN Medium
Area Expedition Conference
Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no
Call Number Serial 1608
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Author Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
Title Thermal boundary resistance at YBaCuO film-substrate interface Type Conference Article
Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages (up) 405-406
Keywords YBCO films
Abstract The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
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Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1665
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M.
Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics
Volume 41 Issue 5 Pages (up) 408-414
Keywords submillimeter waves, transmission
Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no
Call Number Serial 1611
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Author Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W.
Title NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers Type Conference Article
Year 1999 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 3828 Issue Pages (up) 410-416
Keywords NbN HEB mixers
Abstract We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
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Publisher Spie Place of Publication Editor Chamberlain, J.M.
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Area Expedition Conference Terahertz Spectroscopy and Applications II
Notes Approved no
Call Number Serial 1477
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E.
Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.
Volume 14 Issue 7 Pages (up) 414-420
Keywords HEB
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Notes Duplicated as 1697 Approved no
Call Number Serial 236
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Heating of electrons in a superconductor in the resistive state by electromagnetic radiation Type Journal Article
Year 1984 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 59 Issue 2 Pages (up) 442-450
Keywords Nb HEB
Abstract The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Notes Approved no
Call Number RPLAB @ phisix @ Serial 983
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Effect of electromagnetic radiation on a superconductor in a magnetic field Type Conference Article
Year 1988 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 52 Issue 3 Pages (up) 449-451
Keywords
Abstract The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
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Language Russian Summary Language Original Title
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ISSN 0367-6765 ISBN Medium
Area Expedition Conference 4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987
Notes Approved no
Call Number Serial 1702
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Author Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F.
Title Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light Type Journal Article
Year 1991 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 4 Issue 9 Pages (up) 453-456
Keywords NbN HEB detectors
Abstract The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.
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ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 242
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages (up) 454-455
Keywords Ge, exciton photoconduction
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Notes Approved no
Call Number Serial 1715
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