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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A. D.; Gol’tsman, G. N. |
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2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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2007 |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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112 |
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NbN HEB mixers |
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A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations. |
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1419 |
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Kim, Yong-Su; Lee, Jong-Chan; Kwon, Osung; Kim, Yoon-Ho |
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Protecting entanglement from decoherence using weak measurement and quantum measurement reversal |
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2012 |
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Nature Physics |
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Nat. Phys. |
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8 |
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2 |
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117-120 |
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fromIPMRAS |
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Decoherence, often caused by unavoidable coupling with the environment, leads to degradation of quantum coherence. For a multipartite quantum system, decoherence leads to degradation of entanglement and, in certain cases, entanglement sudden death. Tackling decoherence, thus, is a critical issue faced in quantum information, as entanglement is a vital resource for many quantum information applications including quantum computing, quantum cryptography, quantum teleportation and quantum metrology. Here, we propose and demonstrate a scheme to protect entanglement from decoherence. Our entanglement protection scheme makes use of the quantum measurement itself for actively battling against decoherence and it can effectively circumvent even entanglement sudden death. |
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RPLAB @ gujma @ |
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815 |
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Hübers, Heinz-Wilhelm; Semenov, Alexei; Schubert, Josef; Gol'tsman, Gregory; Voronov, Boris; Gershenzon, Evgeni |
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Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz |
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2000 |
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Proc. 8-th Int. Conf. on Terahertz Electronics |
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Proc. 8-th Int. Conf. on Terahertz Electronics |
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117-119 |
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NbN HEB mixers |
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We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens. |
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Darmstadt, Germany |
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International Conference on Terahertz Electronics [8th], Held inDarmstadt, Germany on 28-29 September 2000 |
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1553 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Character of submillimeter photoconductivity in n-lnSb |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Gap frequency and photon absorption in a hot electron bolometer |
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2016 |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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121 |
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NbN HEB; Si membrane |
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The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. |
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