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Gerecht, E., Musante, C. F., Wang, Z., Yngvesson, K. S., Mueller, E. R., Waldman, J., et al. (1996). Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 584–600).
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Verevkin, A. I., Ptitsina, N. G., Chulkova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1995). Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures. JETP Lett., 61(7), 591–595.
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Gershenzon, E. M., & Gol'tsman, G. N. (1993). Hot electron superconductive mixers. In Proc. 4th Int. Symp. Space Terahertz Technol. (pp. 618–622).
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Gol'tsman, G. N., Elant'iev, A. I., Karasik, B. S., & Gershenzon, E. M. (1993). Antenna – coupled superconducting electron-heating bolometer. In Proc. 4th Int. Symp. Space Terahertz Technol. (pp. 623–628).
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Gershenzon, E. M., Gol'tsman, G. N., Potapov, V. D., & Sergeev, A. V. (1991). Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction. Phys. B Condens. Mat., 169(1-4), 629–630.
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Gershenzon, E. M., Goltsman, G. N., & Orlov, L. (1976). Investigation of population and ionization of donor excited states in Ge. In Physics of Semiconductors (pp. 631–634). North-Holland Publishing Co.
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Gershenzon, E. M., Gol'tsman, G. N., Potapov, V. D., & Sergeev, A. V. (1990). Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction. Solid State Communications, 75(8), 639–641.
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Gol’tsman, G. N., & Gershenzon, E. M. (1999). Phonon-cooled hot-electron bolometric mixer: overview of recent results. Appl. Supercond., 6(10-12), 649–655.
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Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1993). Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films. Appl. Phys. Lett., 63(5), 681–683.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsyna, N. G. (1979). Capture of photoexcited carriers by shallow impurity centers in germanium. Sov. Phys. JETP, 50(4), 728–734.
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