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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G.
Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages (up) 147-148
Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth
Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Area Expedition Conference
Notes Approved no
Call Number Serial 1175
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Author Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N.
Title Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications Type Conference Article
Year 2005 Publication Proc. 9-th WMSCI Abbreviated Journal Proc. 9-th WMSCI
Volume 9 Issue Pages (up) 148-153
Keywords NbN HEB mixers
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Publisher International Institute of Informatics and Systemics Place of Publication Editor
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ISSN ISBN 9806560639, 9789806560635 Medium
Area Expedition Conference 9th World Multi-Conference on Systemics, Cybernetics and Informatics
Notes Approved no
Call Number Serial 1480
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E.
Title Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies Type Conference Article
Year 1998 Publication Proc. 6-th Int. Conf. Terahertz Electron. Abbreviated Journal Proc. 6-th Int. Conf. Terahertz Electron.
Volume Issue Pages (up) 149-152
Keywords NbN HEB mixers
Abstract The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
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Area Expedition Conference IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171)
Notes Approved no
Call Number Serial 1582
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Author Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M.
Title Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers Type Conference Article
Year 2005 Publication Proc. 9-th WMSCI Abbreviated Journal Proc. 9-th WMSCI
Volume 9 Issue Pages (up) 154-159
Keywords NbN HEB mixers
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Publisher International Institute of Informatics and Systemics Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 547
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Author Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M.
Title Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5105 Issue Pages (up) 160-170
Keywords NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices
Abstract We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
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Publisher SPIE Place of Publication Editor Donkor, E.; Pirich, A.R.; Brandt, H.E.
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Area Expedition Conference Quantum Information and Computation
Notes Approved no
Call Number Serial 1514
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