Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Wilsher, K., et al. (2003). A superconducting single-photon detector for CMOS IC probing. In Proc. 16-th LEOS (Vol. 2, pp. 602–603).
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Yang, J. K. W., Dauler, E., Ferri, A., Pearlman, A., Verevkin, A., Gol’tsman, G., et al. (2005). Fabrication development for nanowire GHz-counting-rate single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 626–630.
Abstract: We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity.
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Gol’tsman, G. N., & Gershenzon, E. M. (1999). Phonon-cooled hot-electron bolometric mixer: overview of recent results. Appl. Supercond., 6(10-12), 649–655.
Abstract: The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1993). Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films. Appl. Phys. Lett., 63(5), 681–683.
Abstract: The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
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