Ptitsina, N. G., Chulkova, G. M., Il’in, K. S., Sergeev, A. V., Pochinkov, F. S., Gershenzon, E. M., et al. (1997). Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate. Phys. Rev. B, 56(16), 10089–10096.
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
|
Zorin, M., Milostnaya, I., Gol'tsman, G. N., & Gershenzon, E. M. (1997). Fast NbN superconducting switch controlled by optical radiation. IEEE Trans. Appl. Supercond., 7(2), 3734–3737.
Abstract: The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
|
Semenov, A. D., Gousev, Y. P., Renk, K. F., Voronov, B. M., Gol'tsman, G. N., Gershenzon, E. M., et al. (1997). Noise characteristics of a NbN hot-electron mixer at 2.5 THz. IEEE Trans. Appl. Supercond., 7(2), 3572–3575.
Abstract: The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
|
Gousev, Y. P., Semenov, A. D., Goghidze, I. G., Pechen, E. V., Varlashkin, A. V., Gol'tsman, G. N., et al. (1997). Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer. IEEE Trans. Appl. Supercond., 7(2), 3556–3559.
Abstract: We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
|
Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
|
Pothier, H., Guéron, S., Birge, N. O., Esteve, D., & Devoret, M. H. (1997). Energy distribution function of quasiparticles in mesoscopic wires. Phys. Rev. Lett., 79(18), 3490–3493.
Abstract: We have measured with a tunnel probe the energy distribution function of Landau quasiparticles in metallic diffusive wires connected to two reservoir electrodes, with an applied bias voltage. The distribution function in the middle of a 1.5-μm-long wire resembles the half sum of the Fermi distributions of the reservoirs. The distribution functions in 5-μm-long wires are more rounded, due to interactions between quasiparticles during the longer diffusion time across the wire. From the scaling of the data with the bias voltage, we find that the scattering rate between two quasiparticles varies as <c9><203a>–2, where <c9><203a> is the energy transferred.
|
Svechnikov, S., Gol'tsman, G., Voronov, B., Yagoubov, P., Cherednichenko, S., Gershenzon, E., et al. (1997). Spiral antenna NbN hot-electron bolometer mixer at submm frequencies. IEEE Trans. Appl. Supercond., 7(2), 3395–3398.
Abstract: We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
|
Ekstörm, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Gain and noise bandwidth of NbN hot-electron bolometric mixers. Appl. Phys. Lett., 70(24), 3296–3298.
Abstract: We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
|
Semenov, A. D., Heusinger, M. A., Renk, K. F., Menschikov, E., Sergeev, A. V., Elant'ev, A. I., et al. (1997). Influence of phonon trapping on the performance of NbN kinetic inductance detectors. IEEE Trans. Appl. Supercond., 7(2), 3083–3086.
Abstract: Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.
|
Kawamura, J., Blundell, R., Tong, C. -yu E., Gol’tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths. Appl. Phys. Lett., 70(12), 1619–1621.
Abstract: Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell.
|
