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Author Hocker, L. O.; Sokoloff, D. R.; Daneu, V.; Szoke, A.; Javan, A.
Title Frequency mixing in the infrared and far-infrared using a metal-to-metal point contact diode Type Journal Article
Year 1968 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
Volume 12 Issue 12 Pages (up)
Keywords optical antennas
Abstract Metal‐to‐metal point contact diodes were used to obtain the 54‐GHz beat notes between two adjacent 10.6‐μ CO2 laser transitions. The speed of the diodes in the far‐infrared is at least 1000 GHz. This was tested with a 337‐μ HCN laser.
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Call Number RPLAB @ gujma @ Serial 742
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Author Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo
Title Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 98 Issue 25 Pages (up) 3
Keywords SNSPD
Abstract We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Call Number RPLAB @ gujma @ Serial 665
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Author Terai, Hirotaka; Miki, Shigehito; Yamashita, Taro; Makise, Kazumasa; Wang, Zhen
Title Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 11 Pages (up) 3
Keywords SSPD
Abstract A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Call Number RPLAB @ gujma @ Serial 654
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Author Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.
Title Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 96 Issue 22 Pages (up) 3
Keywords SNSPD
Abstract Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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Call Number RPLAB @ gujma @ Serial 655
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Author Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K.
Title Electrothermal simulation of superconducting nanowire avalanche photodetectors Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 98 Issue 9 Pages (up) 3
Keywords SNAP
Abstract We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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Call Number RPLAB @ gujma @ Serial 658
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Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X.
Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 19 Pages (up) 3
Keywords 2DEG
Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Call Number RPLAB @ gujma @ Serial 673
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Author Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A.
Title Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 15 Pages (up) 3
Keywords SSPD
Abstract We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Call Number RPLAB @ gujma @ Serial 681
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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio
Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 2 Pages (up) 3
Keywords Annealing
Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Notes Annealing Approved no
Call Number RPLAB @ gujma @ Serial 691
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Author Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R.
Title Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 4 Pages (up) 3
Keywords
Abstract Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Call Number RPLAB @ gujma @ Serial 697
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Author Karasik, B. S.; Elantiev, A. I.
Title Noise temperature limit of a superconducting hot-electron bolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 6 Pages (up) 853-855
Keywords HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth
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ISSN 0003-6951 ISBN Medium
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Call Number Serial 260
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Author Siddiqi, I.; Prober, D. E.
Title Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection Type Journal Article
Year 2004 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 84 Issue 8 Pages (up) 1404
Keywords HEB, mixers, dynamic range, saturation, LO power, local oscillator power, Nb
Abstract The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver.
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Call Number Serial 571
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Author Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O.
Title Generating visible single photons on demand with single InP quantum dots Type Journal Article
Year 2003 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 82 Issue 10 Pages (up) 1509-1511
Keywords single photon, quantum dot, InP
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Call Number Serial 503
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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G.
Title Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers Type Journal Article
Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 72 Issue 12 Pages (up) 1516-1518
Keywords HEB mixer; thermal fluctuation noise; TFN
Abstract A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Call Number RPLAB @ gujma @ Serial 760
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Author Mason, Whitney; Waterman, J. R.
Title Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors Type Journal Article
Year 1999 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 74 Issue 11 Pages (up) 1633-1635
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Call Number RPLAB @ s @ Serial 461
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Author Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 16 Pages (up) 2285-2287
Keywords HEB mixer, diffusion cooling channel, diffusion channel
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Call Number Serial 262
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