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Author Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M.
Title The excitonic Zeeman effect in uniaxially-strained germanium Type Journal Article
Year 1987 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 65 Issue 6 Pages (down) 1233-1241
Keywords Ge, Zeeman effect
Abstract We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium.
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Call Number Serial 1705
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Author Andreev, A. F.
Title The thermal conductivity of the intermediate state in superconductors Type Journal Article
Year 1964 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 19 Issue 5 Pages (down) 1228-1231
Keywords superconductors, intermediate state, thermal conductivity
Abstract It is shown that, owing to over-the-barrier reflection of electron excitations at the boundary of the normal and superconducting phases, a temperature drop occurs when there is a flow of heat. The additional thermal resistance of a superconductor in the intermediate state is calculated. It is shown that it increases exponentially as the temperature is lowered and does not depend on the electron mean free path.
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Call Number MSPU @ s @ Andreev_reflection Serial 216
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Author Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
Title Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films Type Journal Article
Year 1995 Publication JETP Abbreviated Journal JETP
Volume 80 Issue 5 Pages (down) 960-964
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Abstract The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
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Call Number RPLAB @ phisix @ Serial 989
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R.
Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 64 Issue 4 Pages (down) 889-897
Keywords Ge, trapping of free carriers
Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
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Call Number Serial 1707
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 4 Pages (down) 769-776
Keywords p-Ge, photoconductivity, energy spectrum, magnetic field
Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Call Number Serial 1727
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 50 Issue 4 Pages (down) 728-734
Keywords Ge, photoexcited carriers, shallow impurity centers
Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
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Notes Approved no
Call Number Serial 1720
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 61 Issue 7 Pages (down) 591-595
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
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Call Number Serial 1624
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 33 Issue 11 Pages (down) 574
Keywords Ge, excitons, photoconductivity
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Call Number Serial 1718
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 3 Pages (down) 555-565
Keywords Ge, GaAs, magnetic field, donors, energy spectrum
Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Notes Approved no
Call Number Serial 1728
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 25 Issue 12 Pages (down) 539-543
Keywords Ge, shallow impurities, excited states
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Call Number Serial 1726
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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V.
Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
Year 1990 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 70 Issue 3 Pages (down) 505-511
Keywords Nb films
Abstract A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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Call Number Serial 241
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Author Gol’tsman, G. N.; Smirnov, K. V.
Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 74 Issue 9 Pages (down) 474-479
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no
Call Number Serial 1541
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Heating of electrons in a superconductor in the resistive state by electromagnetic radiation Type Journal Article
Year 1984 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 59 Issue 2 Pages (down) 442-450
Keywords Nb HEB
Abstract The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Call Number RPLAB @ phisix @ Serial 983
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 64 Issue 5 Pages (down) 404-409
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no
Call Number Serial 1608
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages (down) 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Notes Approved no
Call Number Serial 1711
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