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Verevkin, A. I., Ptitsina, N. G., Chulkova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1995). Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures. JETP Lett., 61(7), 591–595.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1981). Cross section for binding of free carriers into excitons in germanium. JETP Lett., 33(11), 574.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsyna, N. G. (1977). Carrier lifetime in excited states of shallow impurities in germanium. JETP Lett., 25(12), 539–543.
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Gol’tsman, G. N., & Smirnov, K. V. (2001). Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures. Jetp Lett., 74(9), 474–479.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol’tsman, G. N., Gershenzon, E. M., & Ingvesson, K. S. (1996). Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K. JETP Lett., 64(5), 404–409.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1982). Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state. JETP Lett., 36(7), 296–299.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Karasik, B. S., Semenov, A. D., & Sergeev, A. V. (1987). Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound. JETP Lett., 46(6), 285–287.
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Aksaev, E. E., Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1989). Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures. JETP Lett., 50(5), 283–286.
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Gershenzon, E., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1981). Heating of quasiparticles in a superconducting film in the resistive state. JETP Lett., 34(5), 268–271.
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Gershenzon, E. M., Gol'tsman, G. N., Emtsev, V. V., Mashovets, T. V., Ptitsyna, N. G., & Ryvkin, S. M. (1971). Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett., 14(6), 241.
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Gershenzon, E. M., Gol'tsman, G. N., Karasik, B. S., & Semenov, A. D. (1987). Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum. JETP Lett., 46(5), 237–238.
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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1972). Observation of the free-exciton spectrum at submillimeter wavelengths. JETP Lett., 16(4), 161–162.
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Gershenzon, E. M., Orlova, S. L., Orlov, L. A., Ptitsina, N. G., & Rabinovich, R. I. (1976). Intervalley cyclotron-impurity resonance of electrons in n-Ge. JETP Lett., 24(3), 125–128.
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Baeva, E. M., Titova, N. A., Kardakova, A. I., Piatrusha, S. U., & Khrapai, V. S. (2020). Universal bottleneck for thermal relaxation in disordered metallic films. Jetp Lett., 111(2), 104–108.
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