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	Author	Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Development of a silicon membrane-based multipixel hot electron bolometer receiver			Type	Journal Article
	Year	2017	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	27	Issue	4	Pages	1-5
	Keywords	Multi-pixel, NbN HEB, silicon-on-insulator, horn array
	Abstract	We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1324
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	Author	Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Photon absorption near the gap frequency in a hot electron bolometer			Type	Journal Article
	Year	2017	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	27	Issue	4	Pages	1-4
	Keywords	NBN HEB mixer
	Abstract	The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1558-2515	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1331
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	Author	Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver			Type	Conference Article
	Year	2017	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	27	Issue	4	Pages	6
	Keywords	Multi-pixel, HEB, silicon-on-insulator, horn array
	Abstract	We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide,
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1111
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	Author	Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M.
	Title	A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range			Type	Conference Article
	Year	1998	Publication	Proc. 6-th Int. Conf. Terahertz Electron.	Abbreviated Journal	Proc. 6-th Int. Conf. Terahertz Electron.
	Volume		Issue		Pages	18-20
	Keywords	NbN HEB mixers
	Abstract	We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz.
	Address	Leeds, UK
	Corporate Author				Thesis
	Publisher	IEEE	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	0-7803-4903-2	Medium
	Area		Expedition		Conference	IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171)
	Notes				Approved	no
	Call Number				Serial	1581
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	Author	Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S.
	Title	Phonon-cooled NbN HEB mixers for submillimeter wavelengths			Type	Conference Article
	Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	23-28
	Keywords	waveguide NbN HEB mixers
	Abstract	The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	275
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	Author	Tong, C. Y. E.; Blundell, R.; Bumble, B.; Stern, J. A.; LeDuc, H. G.
	Title	Sub-Millimeter distributed quasiparticle receiver employing a non-Linear transmission line			Type	Conference Article
	Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal
	Volume		Issue		Pages	47
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	271
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	Author	Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
	Title	The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz			Type	Conference Article
	Year	2002	Publication	Proc. 13^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 13^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	65-72
	Keywords	waveguide NbN HEB mixers
	Abstract	We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Cambridge, MA, USA	Editor	Harvard university
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	326
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	Author	Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G.
	Title	A microwave reflection readout scheme for hot electron bolometric direct detector			Type	Journal Article
	Year	2015	Publication	IEEE Trans. THz Sci. Technol.	Abbreviated Journal	IEEE Trans. THz Sci. Technol.
	Volume	5	Issue		Pages	81-84
	Keywords	HEB detectors
	Abstract	In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ atomics90 @			Serial	950
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	Author	Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Gap frequency and photon absorption in a hot electron bolometer			Type	Conference Article
	Year	2016	Publication	Proc. 27^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 27^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	121
	Keywords	NbN HEB; Si membrane
	Abstract	The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1204
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	Author	Blundell, R.; Barrett, J.; H. Gibson, C. Gotteib; Hunter, T.; Kimberk, R.; Leiker, S.; Marrone, D.; Meledin, D.; Paine, S.; Papa, D. C.; Plante, R.; Riddle, P.; Smith, M.; Sridharan, T.; Tong, C. E.; Wilson, R.; Diaz, M.; Bronfman, L.; May, J.; Otarola, A.; Radford, S. J.
	Title	Prospects for terahertz radio astronomy from Northean Chile			Type	Conference Article
	Year	2002	Publication	Proc. 13^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal
	Volume		Issue		Pages	159-166
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Cambridge, MA, USA	Editor	Harvard university
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ meledin_2p5_stability			Serial	327
Permanent link to this record