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Gol'tsman, G.; Korneev, A.; Minaeva, O.; Antipov, A.; Divochiy, A.; Kaurova, N.; Voronov, B.; Pan, D.; Cross, A.; Pearlman, A.; Komissarov, I.; Slysz, W.; Sobolewski, R. |
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Middle-infrared to visible-light ultrafast superconducting single-photon detector |
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2006 |
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Proc. ASC |
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Seattle |
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RPLAB @ s @ SSPD_cavity_ASC |
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389 |
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Chulkova, G.; Milostnaya, I.; Tarkhov, M.; Korneev, A.; Minaeva, O.; Voronov, B.; Divochiy, A.; Gol'tsman, G.; Kitaygorsky, J.; Pan, D.; Sobolewski, R. |
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Superconducting single-photon nanostructured detectors for advanced optical applications |
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Conference Article |
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2006 |
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Proc. Symposium on Photonics Technologies for 7th Framework Program |
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400 |
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SSPD, SNSPD |
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We present superconducting single-photon detectors (SSPDs) based on NbN thin-film nanostructures and operated at liquid helium temperatures. The SSPDs are made of ultrathin NbN films (2.5-4 nm thick, Tc= 9-11K) as meander-shaped nanowires covering the area of 10× 10 µm2. Our detectors are operated at the temperature well below the critical temperature Tc and are DC biased by a current Ib close to the meander critical current Ic. The operation principle of the detector is based on the use of the resistive region in a narrow ultra-thin superconducting stripe upon the absorption of an incident photon. The developed devices demonstrate high sensitivity and response speed in a broadband range from UV to mid-IR (up to 6 µm), making them very attractive for advanced optical technologies, which require efficient detectors of single quanta and low-density optical radiation. |
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RPLAB @ sasha @ chulkova2006superconducting |
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1021 |
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Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol’tsman, G. |
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Superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
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Conference Article |
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2008 |
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Supercond. News Forum |
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Supercond. News Forum |
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PNR SSPD, SNSPD |
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We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing. |
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Reference No. ST34, paper # 012307, eventually not pulished (skipped) at https://iopscience.iop.org/issue/0953-2048/21/1 |
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RPLAB @ sasha @ korneevsuperconducting |
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1046 |
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Minaeva, O.; Divochiy, A.; Korneev, A.; Sergienko, A. V.; Goltsman, G. N. |
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High speed infrared photon counting with photon number resolving superconducting single-photon detectors (SSPDs) |
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Conference Article |
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2009 |
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CLEO/Europe – EQEC |
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CLEO/Europe – EQEC |
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SSPD, SNSPD |
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A review of development and characterization of the nanostructures consisting of several meander sections, all connected in parallel was presented. Such geometry leads to a significant decrease of the kinetic inductance, without a decrease of the SSPD active area. A new type of SSPDs possess the QE of large-active- area devices, but, simultaneously, allows achieving short response times and the GHz-counting rate. This new generation of superconducting detectors has another significant advantage for quantum key distribution, they have a photon number resolving capability and can distinguish more photons. |
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1399 |
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Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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Miscellaneous |
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2012 |
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arXiv |
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arXiv |
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1108.5299 |
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1-23 |
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optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency |
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Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. |
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845 |
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Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. |
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Superconducting nanowire photon number resolving detector at telecom wavelength |
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Conference Article |
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2008 |
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CLEO/QELS |
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CLEO/QELS |
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Qmj1 (1 to 2) |
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PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers |
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We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. |
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Optical Society of America |
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978-1-55752-859-9 |
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Marsili:08 |
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1243 |
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Minaeva, O.; Fraine, A.; Korneev, A.; Divochiy, A.; Goltsman, G.; Sergienko, A. |
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High resolution optical time-domain reflectometry using superconducting single-photon detectors |
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Conference Article |
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2012 |
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Frontiers in Opt. 2012/Laser Sci. XXVIII |
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Frontiers in Opt. 2012/Laser Sci. XXVIII |
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Fw3a.39 |
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SSPD, SNSPD, Photodetectors; Fiber characterization; Light beams; Optical time domain reflectometry; Photon counting; Single mode fibers; Single photon detectors; Superconductors |
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We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs. |
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Optical Society of America |
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1237 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. |
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Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders |
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2007 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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1 |
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L9.00013 |
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We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature. |
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1027 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory |
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Nanosecond, transient resistive state in two-dimensional superconducting stripes |
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2006 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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H38.13 |
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NbN stripes |
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We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures. |
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Baltimore, MD |
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Chulkova, G.; Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Voronov, B.; Okunev, O.; Smirnov, K.; Gol’tsman, G.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R.; Slysz, W. |
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Superconducting nanostructures for counting of single photons in the infrared range |
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Conference Article |
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2005 |
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Proc. 2-nd CAOL |
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Proc. 2-nd CAOL |
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2 |
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100-103 |
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SSPD, SNSPD |
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We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m. |
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Second International Conference on Advanced Optoelectronics and Lasers |
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