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Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
Type |
Conference Article |
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Year |
2018 |
Publication |
Proc. Optical Sensing and Detection V |
Abbreviated Journal |
Proc. Optical Sensing and Detection V |
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10680 |
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30-39 |
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Keywords |
graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves |
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Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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Spie |
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Berghmans, F.; Mignani, A.G. |
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10.1117/12.2307020 |
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1306 |
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Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Tunnel field-effect transistors for sensitive terahertz detection |
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Journal Article |
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Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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12 |
Issue |
1 |
Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
543 |
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field-effect transistors, bilayer graphene, BLG |
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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
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Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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English |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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1261 |
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Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Resonant terahertz detection using graphene plasmons |
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Journal Article |
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Year |
2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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9 |
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5392 (1 to 8) |
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THz, graphene plasmons |
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Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
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Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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1148 |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Helicity-sensitive plasmonic terahertz interferometer |
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Journal Article |
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Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
20 |
Issue |
10 |
Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
7296-7303 |
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graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
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Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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1781 |
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Author |
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Towards to the development of THz detectors based on carbon nanostructures |
Type |
Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1092 |
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012039 (1 to 4) |
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CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1742-6588 |
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1302 |
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Author |
Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Carbon nanotube based terahertz radiation detectors |
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Conference Article |
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Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1410 |
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012208 (1 to 5) |
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carbon nanotubes, CNT |
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In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. |
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1742-6588 |
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1270 |
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Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
Type |
Conference Article |
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2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
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5 |
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13 |
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27301-27306 |
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graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
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We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
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2214-7853 |
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1316 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
Type |
Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051050 (1 to 5) |
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field-effect transistor, FET, carbon nanotube, CNT |
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In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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1301 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
![goto web page (via DOI) doi](img/doi.gif)
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1300 |
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Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
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Journal Article |
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Year |
2018 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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112 |
Issue |
14 |
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141101 (1 to 5) |
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graphene field effect transistors, FET |
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Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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0003-6951 |
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1309 |
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