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Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. |
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Title |
Characterization of MoSi superconducting single-photon detectors in the magnetic field |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2200504 (1 to 4) |
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SSPD, SNSPD |
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We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges. |
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RPLAB @ akorneev @ KorneevIEEE2015 |
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991 |
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Smirnov, K. V.; Vachtomin, Y. B.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Korneev, A. A.; Goltsman, G. N. |
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Title |
Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography |
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Conference Article |
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2008 |
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Proc. SPIE |
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Proc. SPIE |
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7138 |
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713827 (1 to 6) |
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SSPD, SNSPD, superconducting single photon detector, ultra-thin superconducting films, optical fiber coupling, ready to use receiver |
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At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (TC=10-11 K, jC= 5-7•106 A/cm2); the sensitive area dimensions are 10×10 μm2. The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 μm), >4 % (at 1.55 μm); dark counts rate ≤1 s-1; duration of voltage pulse ≤5 ns; jitter ≤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar. |
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Spie |
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Tománek, P.; Senderáková, D.; Hrabovský, M. |
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1405 |
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Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. |
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Title |
Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime |
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Journal Article |
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2020 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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128 |
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22 |
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224303 (1 to 11) |
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HEB, resonant tunneling diode, RTD |
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The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states. |
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0021-8979 |
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1262 |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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Journal Article |
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2010 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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97 |
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13 |
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131907 (1 to 3) |
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SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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0003-6951 |
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1238 |
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Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N. |
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Title |
Superconducting single-photon detector made of MoSi film |
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Journal Article |
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Year |
2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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27 |
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9 |
Pages |
095012 |
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SSPD, SNSPD |
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We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. |
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IOP Publishing |
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0953-2048 |
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RPLAB @ sasha @ korneeva2014superconducting |
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1044 |
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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] |
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Journal Article |
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Year |
2010 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
96 |
Issue |
8 |
Pages |
089901 |
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SSPD, SNSPD, erratum |
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A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered. |
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0003-6951 |
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1395 |
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Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
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Thermal properties of NbN single-photon detectors |
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Journal Article |
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2018 |
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Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
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NbN SSPD, SNSPD |
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We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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2331-7019 |
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1226 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V. |
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Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range |
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Conference Article |
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2017 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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917 |
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062037 |
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NbN SSPD, SNSPD |
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We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range. |
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1742-6588 |
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1233 |
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Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Y. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Y. |
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Title |
Rise time of voltage pulses in NbN superconducting single photon detectors |
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Journal Article |
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2016 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
109 |
Issue |
5 |
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052601 |
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SSPD, SNSPD |
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We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.
D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K). |
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0003-6951 |
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1236 |
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Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. |
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Electron diffusivity measurements of VN superconducting single-photon detectors |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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Volume |
1124 |
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051032 |
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SSPD, SNSPD, VN |
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The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm. |
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1229 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. |
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Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051030 |
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SSPD, SNSPD, VN |
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We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors. |
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1742-6588 |
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1228 |
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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors |
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Journal Article |
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2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
91 |
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3 |
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031106 (1 to 3) |
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SSPD, SNSPD, APD |
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The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots.
This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program. |
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0003-6951 |
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Erratum: 1395 |
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1396 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. |
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Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements |
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Journal Article |
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2011 |
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Semicond. Sci. Technol. |
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Semicond. Sci. Technol. |
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26 |
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025013 |
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AlGaAs/GaAs heterojunctions |
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We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
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Superconducting detector of IR single-photons based on thin WSi films |
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Conference Article |
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2016 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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737 |
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012032 |
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WSi SSPD, SNSPD, NEP |
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We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Influence of deposited material energy on superconducting properties of the WSi films |
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2020 |
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IOP Conf. Ser.: Mater. Sci. Eng. |
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IOP Conf. Ser.: Mater. Sci. Eng. |
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781 |
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012013 (1 to 6) |
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WSi SSPD, SNSPD |
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WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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