| Records |
| Author |
Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. |
| Title |
IF impedance and mixer gain of NbN hot electron bolometers |
Type |
Journal Article |
| Year |
2007 |
Publication |
J. Appl. Phys. |
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| Volume |
101 |
Issue |
4 |
Pages  |
044511 |
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| ISSN |
0021-8979 |
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no |
| Call Number |
RPLAB @ s @ |
Serial |
445 |
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| Author |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
| Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
Type |
Journal Article |
| Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
19 |
Pages |
2826 |
| Keywords |
HEB |
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0003-6951 |
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no |
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Serial |
543 |
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| Author |
Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
| Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
Type |
Journal Article |
| Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
79 |
Issue |
15 |
Pages |
2483-2485 |
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0003-6951 |
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no |
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311 |
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| Author |
Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
| Title |
Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers |
Type |
Journal Article |
| Year |
2004 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
84 |
Issue |
11 |
Pages |
1958-1960 |
| Keywords |
NbN HEB mixers |
| Abstract |
We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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352 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
| Title |
Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue |
2 |
Pages |
495-498 |
| Keywords |
HEB mixer distributed model, HEB distributed model, distributed HEB model |
| Abstract |
Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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no |
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980 |
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