Гершензон, Е. М., Литвак-Горская, Л. Б., Луговая, Г. Я., & Шапиро, Е. З. (1986). Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩. Физика и техника полупроводников, 20(1), 99–103.
Abstract: В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph.
|
Ozhegov, R. V., Gorshkov, K. N., Vachtomin, Y. B., Smirnov, K. V., Finkel, M. I., Goltsman, G. N., et al. (2014). Terahertz imaging system based on superconducting heterodyne integrated receiver. In C. Corsi, & F. Sizov (Eds.), Proc. THz and Security Applications (pp. 113–125). Dordrecht: Springer Netherlands.
Abstract: The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K.
|
|
Shitov, S. V., Inatani, J., Shan, W. - L., Takeda, M., Wang, Z., Uvarov, A. V., et al. (2008). Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 263–266).
|
Dube, I., Jiménez, D., Fedorov, G., Boyd, A., Gayduchenko, I., Paranjape, M., et al. (2015). Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors. Carbon, 87, 330–337.
Abstract: Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
|
Gayduchenko, I., Xu, S. G., Alymov, G., Moskotin, M., Tretyakov, I., Taniguchi, T., et al. (2021). Tunnel field-effect transistors for sensitive terahertz detection. Nat. Commun., 12(1), 543.
Abstract: The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
|
