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Author Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum Type Journal Article
  Year 1987 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 46 Issue 5 Pages (down) 237-238  
  Keywords YBCO HTS detectors  
  Abstract For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.  
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  Call Number Serial 1703  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 5 Pages (down) 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Notes Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
  Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 16 Issue 4 Pages (down) 161-162  
  Keywords Ge, energy spectrum, free excitons  
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  Notes Approved no  
  Call Number Serial 1736  
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. url  openurl
  Title Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
  Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 24 Issue 3 Pages (down) 125-128  
  Keywords n-Ge, cyclotron-impurity resonance  
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  Notes Approved no  
  Call Number Serial 1730  
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Author Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. url  doi
openurl 
  Title Universal bottleneck for thermal relaxation in disordered metallic films Type Journal Article
  Year 2020 Publication JETP Lett. Abbreviated Journal Jetp Lett.  
  Volume 111 Issue 2 Pages (down) 104-108  
  Keywords NbN disordered metallic films, thermal relaxation  
  Abstract We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1164  
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue 4 Pages (down) 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
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  Notes Approved no  
  Call Number Serial 1773  
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Author Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. url  doi
openurl 
  Title Generation of nanosecond terahertz pulses by the optical rectification method Type Journal Article
  Year 2012 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 96 Issue 2 Pages (down) 94-97  
  Keywords optical rectification, lithium niobate crystal  
  Abstract The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1377  
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 18 Issue 3 Pages (down) 93  
  Keywords Ge, free excitons, energy spectrum  
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  Notes Approved no  
  Call Number Serial 1734  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages (down) 63-65  
  Keywords Ge, donors, excited states  
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  Notes Approved no  
  Call Number Serial 1740  
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. url  doi
openurl 
  Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 73 Issue 1 Pages (down) 44-47  
  Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field  
  Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1752  
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