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Gao, J. R., Hajenius, M., Tichelaar, F. D., Klapwijk, T. M., Voronov, B., Grishin, E., et al. (2007). Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate. Appl. Phys. Lett., 91(6), 062504 (1 to 3).
Abstract: The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
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Kooi, J. W., Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Dieleman, P., et al. (2007). IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys., 101(4), 044511.
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Floet, D. W., Baselmans, J. J. A., Klapwijk, T. M., & Gao, J. R. (1998). Resistive transition of niobium superconducting hot-electron bolometer mixers. Appl. Phys. Lett., 73(19), 2826.
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Ganzevles, W. F. M., Gao, J. R., de Korte, P. A. J., & Klapwijk, T. M. (2001). Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers. Appl. Phys. Lett., 79(15), 2483–2485.
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Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers. Appl. Phys. Lett., 84(11), 1958–1960.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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