Sergeev, A., Semenov, A., Trifonov, V., Karasik, B., Gol'tsman, G., & Gershenzon, E. (1994). Heat transfer in YBaCuO thin film/sapphire substrate system. J. Supercond., 7(2), 341–344.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1979). Population and lifetime of excited states of shallow impurities in Ge. Sov. Phys. JETP, 49(2), 355–362.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Cherednichenko, S., Khosropanah, P., Adam, A., Merkel, H. F., Kollberg, E. L., Loudkov, D., et al. (2003). 1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory. In T. G. Phillips, & J. Zmuidzinas (Eds.), Proc. SPIE (Vol. 4855, pp. 361–370). SPIE.
Abstract: NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope.
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Tong, C. E., Blundell, R., Papa, D. C., Smith, M., Kawamura, J., Gol'tsman, G., et al. (1999). An all solid-state superconducting heterodyne receiver at terahertz frequencies. IEEE Microw. Guid. Wave Lett., 9(9), 366–368.
Abstract: A superconducting hot-electron bolometer mixer-receiver operating from 1 to 1.26 THz has been developed. This heterodyne receiver employs two solid-state local oscillators each consisting of a Gunn oscillator followed by two stages of varactor frequency multiplication. The measured receiver noise temperature is 1350 K at 1.035 THz and 2700 K at 1.26 THz. This receiver demonstrates that tunable solid-state local oscillators, supplying only a few micro-watts of output power, can be used in terahertz receiver applications.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1983). Kinetics of electron and hole binding into excitons in germanium. Sov. Phys. JETP, 57(2), 369–376.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Loudkov, D., Khosropanah, P., Cherednichenko, S., Adam, A., MerkeI, H., Kollberg, E., et al. (2002). Broadband fourier transform spectrometer (FTS) measurements of spiral and double-slot planar antennas at THz frequencies. In Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 373–369).
Abstract: The direct responses of NbN phonon-cooled hot electron bolometer (HEB) mixers, integrated with different planar antennas, are measured, using Fourier Transform Spectrometer (F1S). One spiral antenna and several double slot antennas, designed for 0.6, 1.4, 1.6, 1.8 and 2.5 THz central frequencies, are investigated. The Optimization of the measurement set-up is discussed in terms of the beam splitter and the F11S-to-HEB coupling. The result shows that the spiral antenna is circular polarized and has a bandwidth of about 2 THz. The frequency bands of double slot antennas show some shift from the design values and their relative bandwidth increases by increasing the design frequency. The antenna responses do not depend on the HEB bias point and temperature, as long as the device is in the resistive state.
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Lang, P. T., Knott, W. J., Leipold, I., Renk, K. F., Semenov, A. D., & Gol'tsman, G. N. (1992). Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity. Int. J. of Infrared and Millimeter Waves, 13(3), 373–380.
Abstract: We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used.
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Il'in, K. S., Gol'tsman, G. N., Voronov, B. M., & Sobolewski, R. (1999). Characterization of the electron energy relaxation process in NbN hot-electron devices. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 390–397).
Abstract: We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Ryabchun, S., Tong, C. - Y. E., Blundell, R., Kimberk, R., & Gol'tsman, G. (2007). Study of the effect of microwave radiation on the operation of HEB mixers in the terahertz frequency range. IEEE Trans. Appl. Supercond., 17(2), 391–394.
Abstract: We have investigated the effect of injecting microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the hot-electron bolometer mixer incorporated into a THz heterodyne receiver. More specifically, we show that exposing the mixer to microwave radiation does not cause a significant rise of the receiver noise temperature and fall of the mixer conversion gain so long as the microwave power is a small fraction of local oscillator power. The injection of a small, but controlled amount of microwave power therefore enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the gain stability of hot electron bolometer mixer receivers.
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Finkel, M. I., Maslennikov, S. N., Vachtomin, Y. B., Svechnikov, S. I., Smirnov, K. V., Seleznev, V. A., et al. (2005). Hot electron bolometer mixer for 20 – 40 THz frequency range. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 393–397). Göteborg, Sweden.
Abstract: The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
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