| Records |
| Author |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
| Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
| Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
24 |
Issue |
3 |
Pages  |
125-128 |
| Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
| Title |
Character of submillimeter photoconductivity in n-lnSb |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
49 |
Issue |
1 |
Pages |
121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz |
Type |
Conference Article |
| Year |
1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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121-129 |
| Keywords |
NbN HEB mixers |
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We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz. |
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1588 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Journal Article |
| Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
43 |
Issue |
1 |
Pages |
116-122 |
| Keywords |
Ge, free excitons |
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Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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| Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
| Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
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Conference Article |
| Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
| Volume |
384-3 |
Issue |
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Pages |
107-116 |
| Keywords |
2DEG, AlGaAs/GaAs |
| Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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1536 |
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