| Records |
| Author |
Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E. |
| Title |
Terahertz-frequency waveguide NbN hot-electron bolometer mixer |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
11 |
Issue |
1 |
Pages  |
952-954 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz. |
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1558-2515 |
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1546 |
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| Author |
Yagoubov, Pavel; Kroug, Matthias; Merkel, Harald; Kollberg, Erik; Schubert, Josef; Hübers, Heinz-Wilhelm |
| Title |
NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz |
Type |
Journal Article |
| Year |
1999 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
12 |
Issue |
11 |
Pages |
989-991 |
| Keywords |
NbN HEB mixers |
| Abstract |
The performance of NbN-based phonon-cooled hot electron bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1-0.2 µm; the width is 1-2 µm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power requirement is less than 500 nW at the receiver input. First results on spiral antenna polarization measurements are reported. |
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0953-2048 |
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295 |
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Semenov, A. D.; Il'in, K.; Siegel, M.; Smirnov, A.; Pavlov, S.; Richter, H.; Hübers, H.-W. |
| Title |
Evidence of non-bolometric mixing in the bandwidth of a hot-electron bolometer |
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Journal Article |
| Year |
2006 |
Publication |
Superconductor Science and Technology |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
19 |
Issue |
10 |
Pages |
1051-1056 |
| Keywords |
HEB |
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0953-2048 |
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536 |
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| Author |
Karpowicz, Nicholas; Lu, Xiaofei; Zhang, X.-C. |
| Title |
Terahertz gas photonics |
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Journal Article |
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2009 |
Publication |
J. Modern Opt. |
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56 |
Issue |
10 |
Pages |
1137-1150 |
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The underlying physics of the generation and detection of terahertz (THz) waves in gases are described. The THz wave generation process takes place in two steps: asymmetric gas ionization by two-frequency laser fields, followed by interaction of the ionized electron wave packets with the surrounding medium, producing an intense ‘echo' with tunable spectral content. In order to clarify the physical picture at the moment of ionization, the laser–atom interaction is treated through solution of the time-dependent Schrödinger equation, yielding an ab initio understanding of the release of the electron wave packets. The second step, where the electrons interact with the surrounding plasma is treated analytically. The resulting pressure dependence of the THz radiation is explored in detail. The THz wave detection process is shown to be the result of four-wave mixing, leading to analytical expressions of the signal obtained which allow for improved optimization of systems that exploit these effects. |
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RPLAB @ gujma @ |
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670 |
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Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
| Title |
Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
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Journal Article |
| Year |
1994 |
Publication |
IEEE Trans. Electron Devices |
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41 |
Issue |
9 |
Pages |
1489-1497 |
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