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Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. |
Title |
Low-noise wide-band hot-electron bolometer mixer based on an NbN film |
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Journal Article |
Year |
2009 |
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Radiophys. Quant. Electron. |
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52 |
Issue |
8 |
Pages |
576-582 |
Keywords |
HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel |
Abstract |
We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process. |
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599 |
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Cherednichenko, S.; Drakinskiy, V. |
Title |
Low noise hot-electron bolometer mixers for terahertz frequencies |
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Journal Article |
Year |
2008 |
Publication |
J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
Volume |
151 |
Issue |
1-2 |
Pages |
575-579 |
Keywords |
HEB, mixer, gain bandwidth, MgB2 |
Abstract |
Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed. |
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0022-2291 |
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RPLAB @ lobanovyury @ |
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553 |
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Author |
Ynvesson, K. Sigfrid; Kollberg, Erik L. |
Title |
Optimum receiver noise temperature for NbN HEB mixers according to standard model |
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Conference Article |
Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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566-582 |
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HEB mixer model, standard model, electro-thermal feedback, self-heating parameter, heating efficiency |
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895 |
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Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
Title |
The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
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Journal Article |
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2016 |
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Tech. Phys. Lett. |
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42 |
Issue |
6 |
Pages |
563-566 |
Keywords |
HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection |
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Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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1106 |
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Author |
Gol’tsman, G.N. |
Title |
Overview of recent results for superconducting NbN terahertz and optical detectors and mixers |
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Miscellaneous |
Year |
2014 |
Publication |
SM2 – Seminar on Terahertz Photonics |
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0562 |
Keywords |
NbN SSPD, SNSPD, HEB |
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We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. |
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1746 |
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