| Records |
| Author |
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
| Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
Type |
Journal Article |
| Year |
2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
93 |
Issue |
6 |
Pages  |
064506 |
| Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time |
| Abstract |
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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| ISSN |
2469-9950 |
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no |
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Serial |
1167 |
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| Author |
Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
| Title |
Thermal properties of NbN single-photon detectors |
Type |
Journal Article |
| Year |
2018 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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| ISSN |
2331-7019 |
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no |
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1226 |
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| Author |
Galin, M. A.; Klushin, A. M.; Kurin, V. V.; Seliverstov, S. V.; Finkel, M. I.; Goltsman, G. N.; Müller, F.; Scheller, T.; Semenov, A. D. |
| Title |
Towards local oscillators based on arrays of niobium Josephson junctions |
Type |
Journal Article |
| Year |
2015 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
28 |
Issue |
5 |
Pages |
055002 (1 to 7) |
| Keywords |
Josephson junction local oscillators, JJ LO |
| Abstract |
Various applications in the field of terahertz technology are in urgent need of compact, wide-tunable solid-state continuous wave radiation sources with a moderate power. However, satisfactory solutions for the THz frequency range are scarce yet. Here we report on coherent radiation from a large planar array of Josephson junctions (JJs) in the frequency range between 0.1 and 0.3 THz. The external resonator providing the synchronization of JJ array is identified as a straight fragment of a single-strip-line containing the junctions themselves. We demonstrate a prototype of the quasioptical heterodyne receiver with the JJ array as a local oscillator and a hot-electron bolometer mixer. |
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| ISSN |
0953-2048 |
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no |
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1347 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
| Title |
Electron energy relaxation in disordered superconducting NbN films |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
102 |
Issue |
5 |
Pages |
054501 (1 to 15) |
| Keywords |
NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
| Abstract |
We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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no |
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1266 |
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| Author |
Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
| Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
Type |
Journal Article |
| Year |
2021 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
15 |
Issue |
5 |
Pages |
054014 |
| Keywords |
InOx, Au/Ni, NbN films |
| Abstract |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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| ISSN |
2331-7019 |
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no |
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Serial |
1769 |
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| Author |
Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
| Title |
Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder |
Type |
Journal Article |
| Year |
2019 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
12 |
Issue |
5 |
Pages |
054001 |
| Keywords |
epitaxial TiN films |
| Abstract |
We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. |
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| ISSN |
2331-7019 |
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no |
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Serial |
1166 |
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| Author |
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
| Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051054 |
| Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
| Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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Series Issue |
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Edition |
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| ISSN |
1742-6588 |
ISBN |
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Approved |
no |
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Serial |
1300 |
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| Author |
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
| Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051050 (1 to 5) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
| Abstract |
In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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no |
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Serial |
1301 |
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Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
| Title |
Active and passive phase stabilization for the all-fiber Michelson interferometer |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051014 (1 to 5) |
| Keywords |
Michelson interferometer, phase stabilization |
| Abstract |
We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals. |
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1742-6588 |
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Approved |
no |
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Serial |
1299 |
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| Author |
Shcherbatenko, M. L.; Elezov, M. S.; Goltsman, G. N.; Sych, D. V. |
| Title |
Sub-shot-noise-limited fiber-optic quantum receiver |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. A |
Abbreviated Journal |
Phys. Rev. A |
| Volume |
101 |
Issue |
3 |
Pages |
032306 (1 to 5) |
| Keywords |
SSPD mixer, SNSPD |
| Abstract |
We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency. |
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Edition |
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| ISSN |
2469-9926 |
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Approved |
no |
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Serial |
1268 |
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| Author |
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
| Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
Type |
Conference Article |
| Year |
2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
| Volume |
5 |
Issue |
13 |
Pages |
27301-27306 |
| Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
| Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
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Edition |
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| ISSN |
2214-7853 |
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no |
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Serial |
1316 |
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| Author |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. |
| Title |
Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements |
Type |
Journal Article |
| Year |
2011 |
Publication |
Semicond. Sci. Technol. |
Abbreviated Journal |
Semicond. Sci. Technol. |
| Volume |
26 |
Issue |
2 |
Pages |
025013 |
| Keywords |
AlGaAs/GaAs heterojunctions |
| Abstract |
We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. |
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Edition |
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| ISSN |
0268-1242 |
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no |
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1215 |
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| Author |
Nasr, M. B.; Minaeva, O.; Goltsman, G. N.; Sergienko, A. V.; Saleh, B. E.; Teich, M. C. |
| Title |
Submicron axial resolution in an ultrabroadband two-photon interferometer using superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2008 |
Publication |
Opt. Express |
Abbreviated Journal |
Opt. Express |
| Volume |
16 |
Issue |
19 |
Pages |
15104-15108 |
| Keywords |
SSPD, SNSPD |
| Abstract |
We generate ultrabroadband biphotons via the process of spontaneous parametric down-conversion in a quasi-phase-matched nonlinear grating that has a linearly chirped poling period. Using these biphotons in conjunction with superconducting single-photon detectors (SSPDs), we measure the narrowest Hong-Ou-Mandel dip to date in a two-photon interferometer, having a full width at half maximum (FWHM) of approximately 5.7 fsec. This FWHM corresponds to a quantum optical coherence tomography (QOCT) axial resolution of 0.85 µm. Our results indicate that a high flux of nonoverlapping biphotons may be generated, as required in many applications of nonclassical light. |
| Address |
Departments of Electrical & Computer Engineering and Physics, Quantum Imaging Laboratory, Boston University, Boston, MA 02215, USA. boshra@bu.edu |
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English |
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Edition |
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1094-4087 |
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| Notes |
PMID:18795048 |
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no |
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Serial |
1408 |
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| Author |
Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
| Title |
Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
Type |
Journal Article |
| Year |
2014 |
Publication |
Laser Phys. Lett. |
Abbreviated Journal |
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| Volume |
11 |
Issue |
1 |
Pages |
015004 (1 to 4) |
| Keywords |
HEB applications, HEB detector applications, short THz pulses detection |
| Abstract |
We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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| Author |
Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. |
| Title |
Carbon nanotube based terahertz radiation detectors |
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Conference Article |
| Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1410 |
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012208 (1 to 5) |
| Keywords |
carbon nanotubes, CNT |
| Abstract |
In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. |
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1742-6588 |
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1270 |
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