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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E.
Title Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 9 Issue 2 Pages (down) 3757-3760
Keywords NbN HEB mixers
Abstract The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1569
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Author Kawamura, J. H.; Tong, C.-Y.E.; Blundell, R.; Cosmo Papa, D.; Hunter, T. R.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E.
Title An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 9 Issue 2 Pages (down) 3753-3756
Keywords NbN HEB mixers
Abstract We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 288
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Author Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title Fast NbN superconducting switch controlled by optical radiation Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3734-3737
Keywords NbN superconducting switch
Abstract The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1596
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Author Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R.
Title Noise characteristics of a NbN hot-electron mixer at 2.5 THz Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3572-3575
Keywords NbN HEB mixers
Abstract The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1594
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Author Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F.
Title Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3556-3559
Keywords YBCO HTS HEB mixers
Abstract We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
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Language Summary Language Original Title
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1592
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3548-3551
Keywords NbN HEB mixers
Abstract A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1595
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Author Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K.
Title Spiral antenna NbN hot-electron bolometer mixer at submm frequencies Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3395-3398
Keywords NbN HEB mixers
Abstract We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1597
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Author Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R.
Title Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 9 Issue 2 Pages (down) 3338-3341
Keywords NbN SSPD, SNSPD
Abstract We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Language Summary Language Original Title
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1566
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Author Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A.
Title Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 9 Issue 2 Pages (down) 3216-3219
Keywords RSFQ, NbN, SIS
Abstract A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
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Series Editor Series Title Abbreviated Series Title
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Notes Approved no
Call Number Serial 1081
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Author Semenov, A. D.; Heusinger, M. A.; Renk, K. F.; Menschikov, E.; Sergeev, A. V.; Elant'ev, A. I.; Goghidze, I. G.; Gol'tsman, G. N.
Title Influence of phonon trapping on the performance of NbN kinetic inductance detectors Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages (down) 3083-3086
Keywords NbN KID
Abstract Voltage and microwave photoresponse of NbN thin films to modulated and pulsed optical radiation reveals, far below the superconducting transition, a response time consistent with the lifetime of nonequilibrium quasiparticles. We show that even in 5 nm thick films at 4.2 K the phonon trapping is significant resulting in a quasiparticle lifetime of a few nanoseconds that is an order of magnitude larger than the recombination time. Values and temperature dependence of the quasiparticle lifetime obey the Bardeen-Cooper-Schrieffer theory and are in quantitative agreement with the electron-phonon relaxation rate determined from the resistive response near the superconducting transition. We discuss a positive effect of the phonon trapping on the performance of kinetic inductance detectors.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1598
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Author Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.
Title NbN hot electron superconducting mixers for 100 GHz operation Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages (down) 3065-3068
Keywords NbN HEB mixers
Abstract NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes About LO power required Approved no
Call Number Serial 255
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Author Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title High speed current switching of homogeneous YBaCuO film between superconducting and resistive states Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages (down) 3042-3045
Keywords YBCO HTS HEB switches
Abstract Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
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Language Summary Language Original Title
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1620
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Author Gol'tsman, G.; Kouminov, P.; Goghidze, I.; Gershenzon, E.
Title Nonequilibrium kinetic inductive response of YBCO thin films to low power laser pulses Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages (down) 2591-2594
Keywords YBCO HTS KID
Abstract We have discovered a transient nonequilibrium kinetic inductive voltage response of YBCO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 /spl mu/m and 1.54 /spl mu/m wavelength. By increasing the sensitivity of the read-out system with 100 ps resolution time and diminishing the light intensity (fluence 0.1-2 /spl mu/J/cm/sup 2/) and transport current (density /spl les/10/sup 5/ A/cm/sup 2/) we were able to observe a peculiar bipolar signal form with nearly equal amplitudes for each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively, of the same form as the response in the resistive and normal states: the nonequilibrium picosecond scale component is followed by the bolometric nanosecond component. The nonequilibrium response is interpreted as suppression of the order parameter by excess quasiparticles followed by a change both in resistance (for the resistive state) and in kinetic inductance (for the superconducting state).
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1621
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Author Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 47 Issue 12 Pages (down) 2519-2527
Keywords NbN HEB mixers
Abstract New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1557-9670 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1560
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Author Zorin, M.; Gol'tsman, G.N.; Karasik, B.S.; Elantev, A.I.; Gershenzon, E.M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title Optical mixing in thin YBa2Cu3O7-x films Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages (down) 2431-2434
Keywords YBCO HTS HEB mixers
Abstract High quality, j/sub c/ (77 K)>10/sup 6/ A/cm/sup 2/, epitaxial YBa2Cu3O7-x films of 50 nm thickness were patterned into ten parallel 1 /spl mu/m wide strips. The film structure was coupled to a single-mode fiber. Mixer response was obtained at 0.78 /spl mu/m using laser frequency modulation and an optical delay line. Using two semiconductor lasers at 1.55 /spl mu/m wavelength the beating signal was used to measure the photoresponse up to 18 GHz. Nonequilibrium photoresponse in the resistive state of the superconductor was observed. Bolometric response dominates up to 3 GHz, after which the nonequilibrium response is constant up to the frequency limit of our registration system. Using an electron heating model the influence of different thermal processes on the conversion loss has been analyzed. Ways of increasing the sensitivity are also discussed.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1619
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