Records |
Author |
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
Title |
Noise equivalent temperature difference of a superconducting integrated terahertz receiver |
Type |
Journal Article |
Year |
2009 |
Publication |
J. Commun. Technol. Electron. |
Abbreviated Journal |
J. Commun. Technol. Electron. |
Volume |
54 |
Issue |
6 |
Pages |
716-720 |
Keywords |
SIS mixer SIR NETD, FFO, harmonic mixer |
Abstract |
The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased. |
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1064-2269 |
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1400 |
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Author |
Shein, K. V.; Zarudneva, A. A.; Emel’yanova, V. O.; Logunova, M. A.; Chichkov, V. I.; Sobolev, A.S.; Zav’yalov, V. V.; Lehtinen, J. S.; Smirnov, E. O.; Korneeva, Y. P.; Korneev, A. A.; Arutyunov, K. Y. |
Title |
Superconducting microstructures with high impedance |
Type |
Journal Article |
Year |
2020 |
Publication |
Phys. Solid State |
Abbreviated Journal |
Phys. Solid State |
Volume |
62 |
Issue |
9 |
Pages |
1539-1542 |
Keywords |
superconducting channels, SIS, inetic inductance, tunneling contacts, high impedance |
Abstract |
The transport properties of two types of quasi-one-dimensional superconducting microstructures were investigated at ultra-low temperatures: the narrow channels close-packed in the shape of meander, and the chains of tunneling contacts “superconductor-insulator-superconductor.” Both types of the microstructures demonstrated high value of high-frequency impedance and-or the dynamic resistance. The study opens up potential for using of such structures as current stabilizing elements with zero dissipation. |
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1063-7834 |
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1789 |
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Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
Type |
Journal Article |
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
Volume |
17 |
Issue |
10 |
Pages |
1873-1876 |
Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
Keywords |
RSFQ, NbN, SIS |
Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Author |
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
Title |
Response of carbon nanotube film transistor to the THz radiation |
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Conference Article |
Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
Volume |
195 |
Issue |
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Pages |
05012 (1 to 2) |
Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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Serial |
1317 |
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