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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 33 Issue 11 Pages (down) 574  
  Keywords Ge, excitons, photoconductivity  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1718  
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions Type Journal Article
  Year 1996 Publication Surface Science Abbreviated Journal Surface Science  
  Volume 361-362 Issue Pages (down) 569-573  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1609  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
  Year 1999 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 33 Issue 5 Pages (down) 551-554  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1571  
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Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. url  openurl
  Title Capture of free holes by charged acceptors in uniaxially deformed Ge Type Journal Article
  Year 1988 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov  
  Volume 22 Issue 3 Pages (down) 540-543  
  Keywords Ge, free holes, capture  
  Abstract Цель настоящей работы — исследование кинетики примесной фотопрово­димости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и опреде­ление сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.  
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  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Notes Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge Approved no  
  Call Number Serial 1698  
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
  Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy  
  Volume 52 Issue 4 Pages (down) 454-455  
  Keywords Ge, exciton photoconduction  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1715  
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. url  openurl
  Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
  Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics  
  Volume 41 Issue 5 Pages (down) 408-414  
  Keywords submillimeter waves, transmission  
  Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no  
  Call Number Serial 1611  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue 5 Pages (down) 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
  Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 57 Issue 2 Pages (down) 369-376  
  Keywords Ge, electron and hole binding  
  Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1711  
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Author Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
  Year 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников  
  Volume 6 Issue Pages (down) 362-363  
  Keywords Ge, cyclotron resonance, quantizing magnetic fields  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1774  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 49 Issue 2 Pages (down) 355-362  
  Keywords Ge, photothermal ionization, shallow impurities  
  Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1719  
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
  Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 40 Issue 2 Pages (down) 311-315  
  Keywords Ge, cyclotron resonance  
  Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1768  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Submillimeter spectroscopy of semiconductors Type Journal Article
  Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 37 Issue 2 Pages (down) 299-304  
  Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons  
  Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1735  
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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. url  openurl
  Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
  Year 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya  
  Volume 50 Issue Pages (down) 280-281  
  Keywords Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0367-6755 ISBN Medium  
  Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985  
  Notes Approved no  
  Call Number Serial 1708  
Permanent link to this record
 
 
Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. url  doi
openurl 
  Title Electron–phonon interaction in disordered conductors Type Journal Article
  Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter  
  Volume 263-264 Issue Pages (down) 190-192  
  Keywords disordered conductors, electron-phonon interaction  
  Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1765  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages (down) 163-166  
  Keywords S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1603  
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