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Cherednichenko, S.; Khosropanah, P.; Adam, A.; Merkel, H. F.; Kollberg, E. L.; Loudkov, D.; Gol'tsman, G. N.; Voronov, B. M.; Richter, H.; Huebers, H.-W. |
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Title |
1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory |
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Conference Article |
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Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
4855 |
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361-370 |
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NbN HEB mixers |
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NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope. |
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SPIE |
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Phillips, T.G.; Zmuidzinas, J. |
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Millimeter and Submillimeter Detectors for Astronomy |
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1521 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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Journal Article |
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Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
49 |
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2 |
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355-362 |
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Ge, photothermal ionization, shallow impurities |
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Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Heat transfer in YBaCuO thin film/sapphire substrate system |
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Journal Article |
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Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
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7 |
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2 |
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341-344 |
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YBCO films |
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The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model. |
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0896-1107 |
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1647 |
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Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
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Title |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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337-348 |
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Keywords |
YBCO HTS HEB mixers |
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Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range. |
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1615 |
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Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
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Conference Article |
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2004 |
Publication |
Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
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329-330 |
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We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
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Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
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354 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Hot-electron superconducting mixers |
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Conference Article |
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1993 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
2104 |
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329-330 |
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The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1654 |
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Il'in, K. S.; Cherednichenko, S. I.; Gol'tsman, G. N.; Currie, M.; Sobolewski, R. |
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Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges |
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Conference Article |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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323-330 |
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NbN HEB mixers |
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We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. |
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1590 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
A fast infrared detector based on patterned YBCO thin film |
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Journal Article |
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1994 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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7 |
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5 |
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321-323 |
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YBCO HTS detector |
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Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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0953-2048 |
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1646 |
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Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F. |
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Quasioptical superconducting hot electron bolometer for submillmeter waves |
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Journal Article |
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1996 |
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Int. J. of Infrared and Millimeter Waves |
Abbreviated Journal |
Int. J. of Infrared and Millimeter Waves |
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17 |
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2 |
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317-331 |
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NbN HEB |
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We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated. |
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0195-9271 |
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1618 |
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Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K. |
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Title |
Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies |
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Conference Article |
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Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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303-317 |
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NbN HEB mixers |
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In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB). |
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