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| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Graphene-based lateral Schottky diodes for detecting terahertz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | Proc. Optical Sensing and Detection V | Abbreviated Journal | Proc. Optical Sensing and Detection V |
| Volume | 10680 | Issue | Pages  |
30-39 | |
| Keywords | graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
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| Publisher | Spie | Place of Publication | Editor | Berghmans, F.; Mignani, A.G. | |
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| Notes | Approved | no | |||
| Call Number | 10.1117/12.2307020 | Serial | 1306 | ||
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| Author | Goltsman, G. | ||||
| Title | Quantum-photonic integrated circuits | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages |
22-23 | ||
| Keywords | WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector | ||||
| Abstract | We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1287 | |||
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| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristics of fast-response superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Zhurnal Tekhnicheskoi Fiziki |
| Volume | 59 | Issue | 2 | Pages |
11-120 |
| Keywords | HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1696 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages |
6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Picosecond response on optical-range emission in thin YBaCuO films | Type | Journal Article | ||
| Year | 1991 | Publication | Pisma v Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume | 17 | Issue | 22 | Pages |
6-10 |
| Keywords | YBCO HTS detectors | ||||
| Abstract | Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1684 | |||
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| Author | Minaeva, O.; Fraine, A.; Korneev, A.; Divochiy, A.; Goltsman, G.; Sergienko, A. | ||||
| Title | High resolution optical time-domain reflectometry using superconducting single-photon detectors | Type | Conference Article | ||
| Year | 2012 | Publication | Frontiers in Opt. 2012/Laser Sci. XXVIII | Abbreviated Journal | Frontiers in Opt. 2012/Laser Sci. XXVIII |
| Volume | Issue | Pages |
Fw3a.39 | ||
| Keywords | SSPD, SNSPD, Photodetectors; Fiber characterization; Light beams; Optical time domain reflectometry; Photon counting; Single mode fibers; Single photon detectors; Superconductors | ||||
| Abstract | We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1237 | |||
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| Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
| Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 132 | Issue | 2 | Pages |
2 |
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| Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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| Author | Pernice, W.; Schuck, C.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. | ||||
| Title | High speed travelling wave single-photon detectors with near-unity quantum efficiency | Type | Journal Article | ||
| Year | 2011 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | Issue | Pages |
1-14 | ||
| Keywords | SPD | ||||
| Abstract | Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. Close-to-unity photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides and achieve single photon detection efficiency up to 94% at telecom wavelengths. Our detectors are fully embedded in a scalable, low loss silicon photonic circuit and provide ultrashort timing jitter of 18ps at multi-GHz detection rates. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. | ||||
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| Publisher | Place of Publication | arXiv:1108.5299 | Editor | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 661 | ||
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| Author | Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. | ||||
| Title | High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits | Type | Miscellaneous | ||
| Year | 2012 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | 1108.5299 | Issue | Pages |
1-23 | |
| Keywords | optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency | ||||
| Abstract | Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 845 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages |
1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| ISSN | 2079-4991 | ISBN | Medium | ||
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| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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