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Author Корнеев, А. А.; Минаева, О.; Рубцова, И.; Милостная, И.; Чулкова, Г.; Воронов, Б.; Смирнов, К.; Селезнёв, В.; Гольцман, Г.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Верёвкин, А.; Sobolewski, R.
Title Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN Type Journal Article
Year 2005 Publication Квантовая электроника Abbreviated Journal
Volume 35 Issue 8 Pages (down) 698-700
Keywords NbN SSPD, SNSPD
Abstract Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс.
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Duplicated as 383 (Superconducting single-photon ultrathin NbN film detector) Approved no
Call Number Serial 382
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Author Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R.
Title Superconducting single-photon ultrathin NbN film detector Type Journal Article
Year 2005 Publication Quantum Electronics Abbreviated Journal
Volume 35 Issue 8 Pages (down) 698-700
Keywords NbN SSPD, SNSPD
Abstract Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.
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Notes Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN Approved no
Call Number Serial 383
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Author Yang, J. K. W.; Dauler, E.; Ferri, A.; Pearlman, A.; Verevkin, A.; Gol’tsman, G.; Voronov, B.; Sobolewski, R.; Keicher, W. E.; Berggren, K. K.
Title Fabrication development for nanowire GHz-counting-rate single-photon detectors Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages (down) 626-630
Keywords NbN SSPD, SNSPD
Abstract We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1466
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Author Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N.
Title A superconducting single-photon detector for CMOS IC probing Type Conference Article
Year 2003 Publication Proc. 16-th LEOS Abbreviated Journal Proc. 16-th LEOS
Volume 2 Issue Pages (down) 602-603
Keywords NbN SSPD, SNSPD
Abstract In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Area Expedition Conference The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.
Notes Approved no
Call Number Serial 1510
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Author Pearlman, A.; Cross, A.; Slysz, W.; Zhang, J.; Verevkin, A.; Currie, M.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Sobolewski, R.
Title Gigahertz counting rates of NbN single-photon detectors for quantum communications Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages (down) 579-582
Keywords NbN SSPD, SNSPD
Abstract We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1465
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Author Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R.
Title Fabrication and properties of an ultrafast NbN hot-electron single-photon detector Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 11 Issue 1 Pages (down) 574-577
Keywords NbN SSPD, SNSPD
Abstract A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1547
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Author Korneev, A.; Matvienko, V.; Minaeva, O.; Milostnaya, I.; Rubtsova, I.; Chulkova, G.; Smirnov, K.; Voronov, V.; Gol’tsman, G.; Slysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.
Title Quantum efficiency and noise equivalent power of nanostructured, NbN, single-photon detectors in the wavelength range from visible to infrared Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages (down) 571-574
Keywords NbN SSPD, SNSPD, QE, NEP
Abstract We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1467
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Author Kitaygorsky, J.; Zhang, J.; Verevkin, A.; Sergeev, A.; Korneev, A.; Matvienko, V.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Sobolewski, R.
Title Origin of dark counts in nanostructured NbN single-photon detectors Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages (down) 545-548
Keywords SSPD dark counts, SNSPD, dark counts rate
Abstract We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations.
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Notes Approved no
Call Number Serial 1057
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Author Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R.
Title Nano-structured superconducting single-photon detectors Type Journal Article
Year 2004 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 520 Issue 1-3 Pages (down) 527-529
Keywords NbN SSPD, SNSPD
Abstract NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1495
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Author Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R.
Title Advanced nanostructured optical NbN single-photon detector operated at 2.0 K Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5732 Issue Pages (down) 520-529
Keywords NbN SSPD, SNSPD
Abstract We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as  30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was  20% and decreased exponentially with the wavelength reaching  0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
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Publisher Spie Place of Publication Editor Razeghi, M.; Brown, G.J.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference Quantum Sensing and Nanophotonic Devices II
Notes Approved no
Call Number Serial 1478
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