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Milostnaya, I., Korneev, A., Minaeva, O., Rubtsova, I., Slepneva, S., Seleznev, V., et al. (2005). Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation. In A. Rogalski, E. L. Dereniak, & F. F. Sizov (Eds.), Proc. SPIE (Vol. 5957, 59570A (1 to 9)). SPIE.
Abstract: We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.
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Matyushkin, Y. E., Gayduchenko, I. A., Moskotin, M. V., Goltsman, G. N., Fedorov, G. E., Rybin, M. G., et al. (2018). Graphene-layer and graphene-nanoribbon FETs as THz detectors. In J. Phys.: Conf. Ser. (Vol. 1124, 051054).
Abstract: We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
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Prokhodtsov, A., An, P., Kovalyuk, V., Zubkova, E., Golikov, A., Korneev, A., et al. (2018). Optimization of on-chip photonic delay lines for telecom wavelengths. In J. Phys.: Conf. Ser. (Vol. 1124, 051052).
Abstract: In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
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Golikov, A., Kovalyuk, V., An, P., Zubkova, E., Ferrari, S., Pernice, W., et al. (2018). Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051051).
Abstract: Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.
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Moskotin, M. V., Gayduchenko, I. A., Goltsman, G. N., Titova, N., Voronov, B. M., Fedorov, G. F., et al. (2018). Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes. In J. Phys.: Conf. Ser. (Vol. 1124, 051050 (1 to 5)).
Abstract: In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
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Zubkova, E., An, P., Kovalyuk, V., Korneev, A., Ferrari, S., Pernice, W., et al. (2018). Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide. In J. Phys.: Conf. Ser. (Vol. 1124, 051048).
Abstract: We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
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An, P., Kovalyuk, V., Golikov, A., Zubkova, E., Ferrari, S., Korneev, A., et al. (2018). Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. In J. Phys.: Conf. Ser. (Vol. 1124, 051047).
Abstract: In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
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Komrakova, S., Javadzade, J., Vorobyov, V., Bolshedvorskii, S., Soshenko, V., Akimov, A., et al. (2018). On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV). In J. Phys.: Conf. Ser. (Vol. 1124, 051046 (1 to 4)).
Abstract: Here we studied the fabrication technique of a kilopixel array of nanodiamonds with a nitrogen-vacancy color centers (NV) on top of the chip and measured the second-order correlation function deep, clearly demonstrated the presence of single-photon sources. The controlled position of nanodiamonds, determined from the measurement of second-order correlation fiction, was realize, as well as the yield of optimized technique equals 12.5% is shown.
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Kovalyuk, V., Kahl, O., Ferrari, S., Vetter, A., Lewes-Malandrakis, G., Nebel, C., et al. (2018). On-chip single-photon spectrometer for visible and infrared wavelength range. In J. Phys.: Conf. Ser. (Vol. 1124, 051045).
Abstract: Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors.
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Romanov, N. R., Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., & Smirnov, K. V. (2018). Electron diffusivity measurements of VN superconducting single-photon detectors. In J. Phys.: Conf. Ser. (Vol. 1124, 051032).
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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