| Records |
| Author |
Wild, Wolfgang; Baryshev, Andrey; de Graauw, Thijs; Kardashev, Nikolay; Likhachev, Sergey; Goltsman, Gregory; Koshelets, Valery |
| Title |
Instrumentation for Millimetron – a large space antenna for THz astronomy |
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Conference Article |
| Year |
2008 |
Publication |
Proc. 19th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 19th Int. Symp. Space Terahertz Technol. |
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186-191 |
| Keywords |
Millimetron space observatory, VLBI |
| Abstract |
Millimetron is a Russian-led 12m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation and funded for launch after 2015. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron is currently in a conceptual design phase carried out by the Astro Space Center in Moscow and SRON Netherlands Institute for Space Research. It will use a passively cooled deployable antenna with a high-precision central 3.5m diameter mirror and high- precision antenna petals. The antenna is specified for observations up to ~2 THz over the whole 12m diameter, and to higher frequencies using the central 3.5m solid mirror. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space VLBI system. As single-dish, angular resolutions on the order of 3 to 12 arcsec will be achieved and spectral resolutions of up to 10 6 employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines resulting in micro-arcsec angular resolution. The scientific payload will consist of heterodyne and direct detection instruments covering the most important sub-/millimeter spectral regions (including some ALMA bands) and will build on the Herschel and ALMA heritage. |
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1412 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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Conference Article |
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2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
| Keywords |
NbN HEB mixers |
| Abstract |
We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
| Title |
Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz |
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Conference Article |
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1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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190-199 |
| Keywords |
NbN HEB mixers |
| Abstract |
We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit. |
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1573 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches |
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Conference Article |
| Year |
1992 |
Publication |
Progress in High Temperature Superconductivity |
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Progress in High Temperature Superconductivity |
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32 |
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190-195 |
| Keywords |
superconducting films, heating of electrons |
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International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991 |
| Notes |
https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 |
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1666 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
| Title |
Electron–phonon interaction in disordered conductors |
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Journal Article |
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1999 |
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Phys. Rev. B Condens. Matter |
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Phys. Rev. B Condens. Matter |
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263-264 |
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190-192 |
| Keywords |
disordered conductors, electron-phonon interaction |
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The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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