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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Wild, W., Baryshev, A., de Graauw, T., Kardashev, N., Likhachev, S., Goltsman, G., et al. (2008). Instrumentation for Millimetron – a large space antenna for THz astronomy. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 186–191).
Abstract: Millimetron is a Russian-led 12m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation and funded for launch after 2015. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron is currently in a conceptual design phase carried out by the Astro Space Center in Moscow and SRON Netherlands Institute for Space Research. It will use a passively cooled deployable antenna with a high-precision central 3.5m diameter mirror and high- precision antenna petals. The antenna is specified for observations up to ~2 THz over the whole 12m diameter, and to higher frequencies using the central 3.5m solid mirror. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space VLBI system. As single-dish, angular resolutions on the order of 3 to 12 arcsec will be achieved and spectral resolutions of up to 10 6 employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines resulting in micro-arcsec angular resolution. The scientific payload will consist of heterodyne and direct detection instruments covering the most important sub-/millimeter spectral regions (including some ALMA bands) and will build on the Herschel and ALMA heritage.
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Gao, J. R., Hajenius, M., Tichelaar, F. D., Voronov, B., Grishina, E., Klapwijk, T. M., et al. (2006). Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 187–189).
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Schubert, J., Semenov, A., Gol'tsman, G., Hübers, H. - W., Schwaab, G., Voronov, B., et al. (1999). Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 190–199).
Abstract: We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit.
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Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1992). Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches. In Progress in High Temperature Superconductivity (Vol. 32, pp. 190–195).
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